Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

Hülsewede, R.; Schulze, Hans‐Joachim; Sebastian, J.; Schröder, Daniel; Meusel, J.; Hennig, Petra

doi:10.1117/12.705119

Cited by 14 publications

(8 citation statements)

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“…For a wavelength reduction below 800 nm the epitaxial structures have to be optimized since a reduced wavelength results in a decreased laser performance [1] due to the changing electro-optic properties of the band structure. For this purpose our structure for 800 nm was optimized in two aspects.…”

Section: Laser Bars Around and Below 800 Nmmentioning

confidence: 99%

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New developments of high-power single emitters and laser bars at JENOPTIK

Zorn¹,

Hülsewede²,

Schulze³

et al. 2011

SPIE Proceedings

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High-power single emitters and laser bars find several growing industrial applications such as materials processing. A steady increase in efficiency and output power is needed to conquer new markets. The development of high-end diode lasers usually starts with the development of the epitaxial structure. Therefore, simulations have been performed before the optimized layer structures have been tested using broad area (BA) lasers. Single emitter laser diodes are needed for fiber coupling with a minimal loss of light. We developed such emitters with high output powers at a small far field angle showing output powers of more than 20 W around 940 nm. The high-quality laser bars available at JENOPTIK have been improved and extended to new wavelength ranges. At the lower end, laser bars have been developed around and below 800 nm. At the higher end, design parameters have been optimized for 1060 nm emission wavelength.

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Section: Laser Bars Around and Below 800 Nmmentioning

confidence: 99%

“…At JENOPTIK Diode Lab GmbH laser bars are fabricated for wavelength between 792 nm and 998 nm with a known high and reliable quality [1,2]. To serve more applications, laser bars with wavelengths below 792 nm and above 998 nm have to be developed.…”

Section: Introductionmentioning

confidence: 99%

New developments of high-power single emitters and laser bars at JENOPTIK

Zorn¹,

Hülsewede²,

Schulze³

et al. 2011

SPIE Proceedings

Self Cite

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“…The laser diodes are developed starting from 808 nm laser bars, which have been developed at JDL for the pumping of Nd:YAG lasers [2]. For a layout independent comparison of the epitaxial layer structures at different wavelengths, the structures were processed into broad area lasers.…”

Section: Laser Bars For 792 Nmmentioning

confidence: 99%

“…This applies especially for the 808 nm wavelength range where laser bars with high quality [1,2] are used for pumping of solid state Nd:YAG lasers. Also for 940 nm laser bars which are used e.g.…”

Section: Introductionmentioning

confidence: 98%

JENOPTIK diode lasers and bars optimized for high-power applications in the NIR range

Zorn¹,

Hülsewede²,

Schulze³

et al. 2010

SPIE Proceedings

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Laser diodes and laser bars for the high-volume wavelength ranges at 808 nm and 940 nm are available in optimized design and high quality. However, a lot of other wavelengths in the NIR are needed for specialized applications also requiring high stability, reliability and a good efficiency with a good beam quality. An efficient adaptation of the laser diode design to optimize the laser performance at the customized wavelength is highly desirable. At JENOPTIK Diode Lab (JDL) we therefore focus on a flexible and competitive laser diode design resulting in a high output power and a high efficiency at reasonable production costs. Starting from excellent laser bars at 808 nm and 940 nm laser bars with emission wavelengths around 790 nm, 830 nm, 880nm (cw) and 940 nm (pulsed operation) are developed. For 792 nm a maximum output power of 90 W and an efficiency of 55 % has been achieved with an expected lifetime of more than 15000 hours. At 825 nm a maximum efficiency of 60 % and 60 W output power for more than 20.000 h with a high degree of polarization can be presented. Changing the quantum well material for 885 nm the output power reaches 125W with 63% efficiency also for more than 25.000 hours. Laser bars for pulsed applications (quasi-cw) at 940 nm result in an output power of 500 W with an efficiency of 60 %.

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“…High power laser diodes are not only used directly in materials processing, medicine, display, or printing systems, but also as pump sources for various rod, disk, and fiber lasers [1]. The quality and reliability of high power laser diodes are very important in practical applications.…”

Section: Introductionmentioning

confidence: 99%

Effective methods for evaluation of high power laser diode quality and reliability

Lu¹,

Xie²,

Huang³

et al. 2014

2014 10th International Conference on Reliability, Maintainability and Safety (ICRMS)

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In this paper, a high power laser diode electrical derivative parameters test instrument is developed, the wavelength range of this instrument is between 400nm to 1300nm, the power range of this instrument is between 1W to 15W. The relationships between the device reliability and the electrical derivative parameters are discussed. Then the measurements of 20 high power 808nm AlGaAs/GaAs laser diodes by using this instrument combined with the aging test results demonstrate that the electrical derivative parameters can use to evaluate the laser diode reliability and quality effectively.

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Highly reliable high-power AlGaAs/GaAs 808 nm diode laser bars

Cited by 14 publications

References 0 publications

New developments of high-power single emitters and laser bars at JENOPTIK

New developments of high-power single emitters and laser bars at JENOPTIK

JENOPTIK diode lasers and bars optimized for high-power applications in the NIR range

Effective methods for evaluation of high power laser diode quality and reliability

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