Highly reliable, high speed and low power NAND flash memory-based Solid State Drives (SSDs)

Takeuchi, Ken; Hatanaka, Teruyoshi; Tanakamaru, Shuhei

doi:10.1587/elex.9.779

Cited by 10 publications

(8 citation statements)

References 8 publications

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“…The endurance of NANDs is decreased further [7]. To improve reliability, strong ECCs are recommended to SSD [5,6]. However, they can only postpone the risk of data loss.…”

Section: Related Researchmentioning

confidence: 99%

A new differential RAID for high reliable All Flash Array

et al. 2014

IEICE Electron. Express

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For high I/O performance, Solid State Drive (SSD)-based all Flash arrays (AFAs) are widely employed to larger scale storage systems. However, the aging problem of SSDs limits the lifetime and reliability of AFA. In order to extend the lifetime of AFA, we designed a capacity-based differential RAID (Redundant Array of Independent Disks) scheme (CDiff-RAID). In the proposed scheme, the array is initialized by a group of SSDs with unequal capacities. The smaller SSDs suffer more erase operations and age quickly. To maintain the age differential, the worn SSDs are continually replaced by new SSDs. Compared with parity-based Diff-RAID, the age differential in our scheme is independent of workload and the time-consuming of reconstruction is greatly reduced. We also evaluated the I/O performance of CDiff-RAID using SSD simulators. The proposed scheme outperforms Diff-RAID scheme in sequential and random traces in most cases.

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“…The endurance of NANDs is decreased further [7]. To improve reliability, strong ECCs are recommended to SSD [5,6]. However, they can only postpone the risk of data loss.…”

Section: Related Researchmentioning

confidence: 99%

A new differential RAID for high reliable All Flash Array

et al. 2014

IEICE Electron. Express

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“…NAND flash memories have a dominant share of the growing market for storage applications extending from mobile phones to data storage devices in data centers 46 . The NAND flash memories have the advantages of highdensity memory capacity and low production cost per bit with low power consumption and high-speed programming and erasing mechanisms.…”

Section: Introductionmentioning

confidence: 99%

Quantum Annealing Machines Based on Semiconductor Nanostructures

2019

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The development of quantum annealing machines (QAMs) based on superconducting qubits has progressed greatly in recent years and these machines are now widely used in both academia and commerce. On the other hand, QAMs based on semiconductor nanostructures such as quantum dots (QDs) appear to be still at the initial elementary research stage because of difficulty in controlling interaction between qubits. In this paper, we review a QAM based on a semiconductor nanostructures such as floating gates (FGs) or QDs from the viewpoint of the integration of qubits. We theoretically propose the use of conventional high-density memories such as NAND flash memories for the QAM rather than construction of a semiconductor qubit system from scratch. A large qubit system will be obtainable as a natural extension of the miniaturization of commercial-grade electronics, although further effort will likely be required to achieve high-quality qubits.

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“…Non-volatile memories have become a key technology to realize the advanced electronic devices especially for the portable electronics applications [1,2,3]. Further scaling and integration of non-volatile memories would be required such as 4 tera bits for multi-level cell (MLC) and 8 tera bits for triple-level cell (TLC) with 22 nm technology node in 2028 [4].…”

Section: Introductionmentioning

confidence: 99%

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

Ohmi

Liu

2015

IEICE Electron. Express

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Fully in-situ formation of Hf-based metal-oxide-nitride-oxidesilicon (MONOS) structures utilizing electron-cyclotron-resonance (ECR) plasma sputtering was investigated for the first time. It was found that the MONOS structures with in-situ formed HfN 0.5 gate electrode showed faster programing, high injection efficiency and larger flat-band voltage (V FB ) shift of 2.5 V compared to the MONOS structure with ex-situ formed Al gate electrode under programing voltage of 10 V. The retention characteristics of MONOS structure with in-situ formed HfN 0.5 gate electrode were also superior to the MONOS structure with ex-situ formed Al gate electrode. The degradation of retention for V FB shift after 60 min of programing was 40% for the MONOS structure with ex-situ formed Al gate electrode, while it was 16% for the MONOS structure with in-situ formed HfN gate electrode.

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Highly reliable, high speed and low power NAND flash memory-based Solid State Drives (SSDs)

Cited by 10 publications

References 8 publications

A new differential RAID for high reliable All Flash Array

A new differential RAID for high reliable All Flash Array

Quantum Annealing Machines Based on Semiconductor Nanostructures

In-situ formation of Hf-based MONOS structures for non-volatile memory applications

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