Highly Reliable Ohmic Contacts to N-Polar n-Type GaN for High-Power Vertical Light-Emitting Diodes

Jeon, Joon-Woo; Lee, Sang Youl; Song, June-O; Seong, Tae‐Yeon

doi:10.1109/lpt.2011.2169399

Cited by 5 publications

(1 citation statement)

References 17 publications

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“…[1][2][3][4][5] The performance of VLEDs is in part subject to the formation of low resistance and thermally stable ohmic contacts to N-polar n-type GaN (n-GaN) as well as low resistance p-type reflectors. 6) It has been shown that the electrical characteristics of metal contacts to N-polar n-GaN are different from those of contacts to Ga-polar n-GaN. In other words, unlike contacts to Ga-polar n-GaN, 7,8) ohmic contacts to N-polar n-GaN [9][10][11][12][13][14][15][16][17][18] are not easy to form.…”

Section: Introductionmentioning

confidence: 99%

Thermally stable Ti/Al-based ohmic contacts to N-polar n-GaN by using an indium interlayer

Kim

Han

Seong

2016

Jpn. J. Appl. Phys.

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The electrical properties of In/Ti/Al/Au contacts to N-polar n-GaN (n d = 5 × 1018 cm−3) for high-power vertical light-emitting diodes were investigated at various thicknesses of the In layer, and compared with those of Ti/Al/Au contacts. Before annealing, both the Ti/Al/Au and In/Ti/Al/Au contacts were ohmic. After annealing at 300 °C for 1 min, all of the samples exhibited some degradation of their electrical properties, although the In/Ti/Al/Au samples were more thermally stable. After annealing at 300 °C for 60 min, the Ti/Al/Au contacts became non-ohmic, while the In (5 nm)/Ti/Al/Au contacts remained ohmic with a contact resistivity of 2.6 × 10−4 Ω cm2. X-ray photoemission spectroscopy (XPS) results showed that, for all of the samples, annealing caused an increase in the content of interfacial oxygen. Based on the XPS and electrical results, the annealing dependence of the electrical characteristics of In/Ti/Al/Au contacts are described and discussed.

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