2019 20th International Conference on Solid-State Sensors, Actuators and Microsystems &Amp; Eurosensors XXXIII (TRANSDUCERS &Am 2019
DOI: 10.1109/transducers.2019.8808685
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Highly Reliable Piezoelectric Process Technology in Volume Foundry for Emerging Mems Applications

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Cited by 6 publications
(3 citation statements)
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“…The fabrication process steps exploited to implement the multi-shape cantilever array in this work are illustrated in figure 5. In consideration of the reliability of PZT under the voltage applied, a passivation layer is adopted to avoid degradation of the PZT film due to ambient humidity [24,31]. First of all, 500 nm of thermal oxide was deposited on a silicon on insulator wafer with a 5 µm thick Si device layer.…”
Section: Fabrication and Resultsmentioning
confidence: 99%
See 1 more Smart Citation
“…The fabrication process steps exploited to implement the multi-shape cantilever array in this work are illustrated in figure 5. In consideration of the reliability of PZT under the voltage applied, a passivation layer is adopted to avoid degradation of the PZT film due to ambient humidity [24,31]. First of all, 500 nm of thermal oxide was deposited on a silicon on insulator wafer with a 5 µm thick Si device layer.…”
Section: Fabrication and Resultsmentioning
confidence: 99%
“…In short, piezoelectric films are considered to be promising materials for MEMS microspeakers. Among the available piezoelectric films, PZT films feature a high piezoelectric coefficient and a stable deposition process which has also been commercialized [24]. Thus, this study will leverage the commercial fabrication processes to develop PZT-Si unimorph structures as MEMS microspeakers.…”
Section: Introductionmentioning
confidence: 99%
“…Our sensor utilizes electroplated Ni thick film, a standard CMOS-compatible material, as the magnetic field sensing media. In addition, the PZT used in our sensor is also a promising and reliable piezoelectric material adopted by standard CMOS/semiconductor and MEMS foundries [29]. Note that if considering the environmental friendliness issue of the PZT, another CMOS-compatible/environmentally friendly piezoelectric material, AlN, can be used as an alternative as well.…”
Section: Introductionmentioning
confidence: 99%