Highly reliable TaO&lt;inf&gt;x&lt;/inf&gt; ReRAM with centralized filament for 28-nm embedded application

Hayakawa, Y.; Himeno, A.; Yasuhara, Ryo; Boullart, Werner; Vecchio, E.; Vandeweyer, T.; Witters, T.; Crotti, D.; Jurczak, M.; Fujii, Satoshi; Ito, Satoru; Kawashima, Y.; Ikeda, Y.; Kawahara, Akifumi; Kawai, K.; Wei, Zhiqiang; Muraoka, S.; Shimakawa, K.; Mikawa, Takumi; Yoneda, Shigeo

doi:10.1109/vlsic.2015.7231381

Cited by 31 publications

(15 citation statements)

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“…Among the various transition metal oxide materials, tantalum oxide and hafnium oxide are consistently and unanimously investigated as the most promising materials systems for emerging memory technology and are among the most mature resistive materials explored . Both HfO x /TaO x ‐based RRAM show excellent resistive behavior . Besides, they have the potential to form a multi‐bit memory cell .…”

Section: High‐speed and Scalable Rram Cells And Systemsmentioning

confidence: 99%

“…Park et al demonstrated a lightning rod effect in filamentary switching RRAM could confine the random formation of filaments, thus improving switching uniformity . Hayakawa et al demonstrated a TaO x RRAM with precise filament positioning by forming an encapsulated cell structure . Li et al reported a reduction of variation and forming/set voltage can be achieved through enhanced electrical field by a pyramid‐like electrode .…”

Section: High‐speed and Scalable Rram Cells And Systemsmentioning

confidence: 99%

See 1 more Smart Citation

Memory materials and devices: From concept to application

Zhang

Wang

Shi

et al. 2020

InfoMat

213

142

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Memory cells have always been an important element of information technology. With emerging technologies like big data and cloud computing, the scale and complexity of data storage has reached an unprecedented peak with a much higher requirement for memory technology. As is well known, better data storage is mostly achieved by miniaturization. However, as the size of the memory device is reduced, a series of problems, such as drain gate‐induced leakage, greatly hinder the performance of memory units. To meet the increasing demands of information technology, novel and high‐performance memory is urgently needed. Fortunately, emerging memory technologies are expected to improve memory performance and drive the information revolution. This review will focus on the progress of several emerging memory technologies, including two‐dimensional material‐based memories, resistance random access memory (RRAM), magnetic random access memory (MRAM), and phase‐change random access memory (PCRAM). Advantages, mechanisms, and applications of these diverse memory technologies will be discussed in this review.

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Section: High‐speed and Scalable Rram Cells And Systemsmentioning

confidence: 99%

Section: High‐speed and Scalable Rram Cells And Systemsmentioning

confidence: 99%

Memory materials and devices: From concept to application

Zhang

Wang

Shi

et al. 2020

InfoMat

213

142

View full text Add to dashboard Cite

show abstract

“…RRAM devices are especially attractive due to their good compatibility with logic processes. For instance, an embedded RRAM solution has been introduced for a 28-nm technology node [64], [65]. Therefore, RRAM has great potential as MB-level embedded NVM for micro-controller applications.…”

Section: Niche Market Of Emerging Nvmsmentioning

confidence: 99%

Emerging Memory Technologies: Recent Trends and Prospects

Chen

2016

IEEE Solid-State Circuits Mag.

444

210

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Recent Trends and Prospectshis tutorial introduces the basics of emerging nonvolatile memory (NVM) technologies including spin-transfer-torque magnetic random access memory (STT-MRAM), phase-change random access memory (PCRAM), and resistive random access memory (RRAM). Emerging NVM cell characteristics are summarized, and device-level engineering trends are discussed. Emerging NVM array architectures are introduced, including the onetransistor-one-resistor (1T1R) array and the cross-point array with selectors. Design challenges such as scaling the write current and minimizing the sneak path current in cross-point array are analyzed. Recent progress on megabit-to gigabit-level prototype chip demonstrations is summarized. Finally, the prospective applications of emerging NVM are discussed, ranging from the last-level cache to the storage-class memory in the memory hierarchy. Topics of three-dimensional (3D) integration and radiation-hard NVM are discussed. Novel applications beyond the conventional memory applications are also surveyed, including physical unclonable function for hardware security, reconfigurable routing switch for field-programmable gate array (FPGA), logic-in-memory and nonvolatile cache/register/flip-flop

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“…Special care has to be taken in order to mitigate the possibility for the CF to be formed close to the edges of the device (where these damages are present). This approach has been recently proposed for the precise positioning of the CF in a 28-nm integrated TaO x -based device [78].…”

Section: Vcm Device Optimizationmentioning

confidence: 99%

Filamentary-Based Resistive Switching

Celano

2016

Metrology and Physical Mechanisms in New Generation Ionic Devices

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Highly reliable TaO<inf>x</inf> ReRAM with centralized filament for 28-nm embedded application

Cited by 31 publications

References 0 publications

Memory materials and devices: From concept to application

Memory materials and devices: From concept to application

Emerging Memory Technologies: Recent Trends and Prospects

Filamentary-Based Resistive Switching

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