Highly Reliable Textile‐Type Memristor by Designing Aligned Nanochannels

Abstract

Information‐processing devices are the core components of modern electronics. Integrating them into textiles is the indispensable demand for electronic textiles to form close‐loop functional systems. Memristors with crossbar configuration are regarded as promising building blocks to design woven information‐processing devices that seamlessly unify with textiles. However, the memristors always suffer from severe temporal and spatial variations due to the random growth of conductive filaments during filamentary switching processes. Here, inspired by the ion nanochannels across synaptic membranes, a highly reliable textile‐type memristor made of Pt/CuZnS memristive fiber with aligned nanochannels, showing small set voltage variation (<5.6%) under ultralow set voltage (≈0.089 V), high on/off ratio (≈106), and low power consumption (0.1 nW), is reported. Experimental evidence indicate that nanochannels with abundant active S defects can anchor silver ions and confine their migrations to form orderly and efficient conductive filaments. Such memristive performances enable the resultant textile‐type memristor array to have high device‐to‐device uniformity and process complex physiological data like brainwave signals with high recognition accuracy (95%). The textile‐type memristor arrays are mechanically durable to withstand hundreds of bending and sliding deformations, and seamlessly unified with sensing, power‐supplying, and displaying textiles/fibers to form all‐textile integrated electronic systems for new generation human‐machine interactions.

Controlled Synthesis of Lead-Free Double Perovskite Colloidal Nanocrystals for Nonvolatile Resistive Memory Devices

“…The working mechanism of the Ag/CABB/ITO memristor was analyzed by plotting logarithmic current versus logarithmic voltage for the Ag/Cs 2 AgBiBr 6 /ITO memristor (Figure S8e,f). , The aforementioned results reveal that although the Ag/CABB/ITO device exhibits a typical resistance switching behavior, the device performance, such as the on/off ratio, retention time, and cycling stability, still needs further improvements.…”

Porous crystalline materials for memories and neuromorphic computing systems

“…The device variability issue of filamentary memristors is the serious problem that needs to be solve urgently due to the randomness of ion migration and CFs. Up to now, various strategies have been considered for adjusting the formation of CFs for improving device uniformity, 459 including building ordered ion migration channel, 277,428,460–464 decreasing switching active layer thickness (ion migration length), 465,466 designing bilayer interface, 467–470 and electrode optimization. 471,472 In 2021, Han et al .…”