Highly Scalable Synthesis of MoS<sub>2</sub> Thin Films with Precise Thickness Control via Polymer-Assisted Deposition

Yang, Hee-Seung; Giri, Anupam; Moon, Sungmin; Shin, Sangbae; Myoung, Jae Min; Jeong, Unyong

doi:10.1021/acs.chemmater.7b01605

Cited by 113 publications

(118 citation statements)

References 38 publications

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“…Figure d shows S 2p 1/2 and S 2p 3/2 peaks at 163.70 and 162.51 eV. These peak positions are consistent with those reported for crystalline MoS 2 films . All the single‐crystalline and textured MoS 2 films with different thickness actually show the same XPS peak positions as illustrated above.…”

Section: Resultssupporting

confidence: 86%

Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process

Zhang

Hota

et al. 2020

Adv Funct Materials

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Wafer‐scale, single‐crystalline 2D semiconductors without grain boundaries and defects are needed for developing reliable next‐generation integrated 2D electronics. Unfortunately, few literature reports exist on the growth of 2D semiconductors with single‐crystalline structure at the wafer scale. It is shown that direct sulfurization of as‐deposited epitaxial MoO2 films (especially, with thicknesses more than ≈5 nm) produces textured MoS2 films. This texture is inherited from the high density of defects present in the as‐prepared epitaxial MoO2 film. In order to eliminate the texture of the converted MoS2 films, a new capping layer annealing process (CLAP) is introduced to improve the crystalline quality of as‐deposited MoO2 films and minimize its defects. It is demonstrated that sulfurization of the CLAP‐treated MoO2 films leads to the formation of single‐crystalline MoS2 films, instead of textured films. It is shown that the single‐crystalline MoS2 films exhibit field‐effect mobility of 6.3 cm2 V−1 s−1, which is 15 times higher than that of textured MoS2. These results can be attributed to the smaller concentration of defects in the single‐crystalline films.

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Section: Resultssupporting

confidence: 86%

Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process

Zhang

Hota

et al. 2020

Adv Funct Materials

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“…3a. The equilateral geometry of the triangular crystals, together with sharp and straight edges, implies that the MoS 2 crystals are single crystalline (the semiconducting 2H phase) and may well have Moterminated edges 11,30 . Fig.…”

Section: Resultsmentioning

confidence: 99%

“…In particular, large-scale monolayer MoS 2 synthesized via chemical vapor deposition (CVD) represents an ideal choice for fabricating active semiconducting channels for diodes, transistors, sensors, and other related systems [8][9][10][11] . Monolayer MoS 2 can be slowly oxidized in air or dissolved in aqueous solution after several weeks or months, resulting in its environmental degradation [12][13][14][15] .…”

Section: Introductionmentioning

confidence: 99%

Degradation behaviors and mechanisms of MoS2 crystals relevant to bioabsorbable electronics

et al. 2018

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Monolayer molybdenum disulfide (MoS 2 ) exhibits unique semiconducting and bioresorption properties, giving this material enormous potential for electronic/biomedical applications, such as bioabsorbable electronics. In this regard, understanding the degradation performance of monolayer MoS 2 in biofluids allows modulation of the properties and lifetime of related bioabsorbable devices and systems. Herein, the degradation behaviors and mechanisms of monolayer MoS 2 crystals with different misorientation angles are explored. High-angle grain boundaries (HAGBs) biodegrade faster than low-angle grain boundaries (LAGBs), exhibiting degraded edges with wedge and zigzag shapes, respectively. Triangular pits that formed in the degraded grains have orientations opposite to those of the parent crystals, and these pits grow into larger pits laterally. These behaviors indicate that the degradation is induced and propagated based on intrinsic defects, such as grain boundaries and point defects, because of their high chemical reactivity due to lattice breakage and the formation of dangling bonds. High densities of dislocations and point defects lead to high chemical reactivity and faster degradation. The structural cause of MoS 2 degradation is studied, and a feasible approach to study changes in the properties and lifetime of MoS 2 by controlling the defect type and density is presented. The results can thus be used to promote the widespread use of two-dimensional materials in bioabsorption applications.

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“…Solution-based synthesis is compatible with existing nanofabrication processes, is scalable at low cost and has already been shown to produce high quality MoS 2 films using a single source precursor such as ammonium tetrathiomolybdate (NH 4 ) 2 MoS 4 through thermal decomposition for electronic devices applications 10 . Therefore, several groups have developed approaches for large area solution-based MoS 2 synthesis via two-step thermolysis of (NH 4 ) 2 MoS 4 films coated in different ways such as dip, roll to roll and spin coating [11][12][13][14][15][16][17][18] . Spin coating of (NH 4 ) 2 MoS 4 solution in particular is highly preferable among other coating techniques due to its integration with current semiconductor technology and its ability to control the initial precursor film thickness through spinning speed as well as precursor solution concentration 13,17 .…”

mentioning

confidence: 99%

“…Therefore, several groups have developed approaches for large area solution-based MoS 2 synthesis via two-step thermolysis of (NH 4 ) 2 MoS 4 films coated in different ways such as dip, roll to roll and spin coating [11][12][13][14][15][16][17][18] . Spin coating of (NH 4 ) 2 MoS 4 solution in particular is highly preferable among other coating techniques due to its integration with current semiconductor technology and its ability to control the initial precursor film thickness through spinning speed as well as precursor solution concentration 13,17 . The main obstacle hindering this coating technique is the low wettability of precursor solutions that utilize common solvents such as dimethylformamide (DMF) and n-methylpyrrolidone (NMP), with commonly used substrates like SiO 2 /Si or sapphire.…”

mentioning

confidence: 99%

Solution-Based Synthesis of Few-Layer WS2 Large Area Continuous Films for Electronic Applications

Abbas

Zeimpekis

Wang

et al. 2020

Sci Rep

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Unlike MoS 2 ultra-thin films, where solution-based single source precursor synthesis for electronic applications has been widely studied, growing uniform and large area few-layer WS 2 films using this approach has been more challenging. Here, we report a method for growth of few-layer WS 2 that results in continuous and uniform films over centimetre scale. The method is based on the thermolysis of spin coated ammonium tetrathiotungstate ((NH 4 ) 2 WS 4 ) films by two-step high temperature annealing without additional sulphurization. this facile and scalable growth method solves previously encountered film uniformity issues. Atomic force microscopy (AFM) and transmission electron microscopy (TEM) were used to confirm the few-layer nature of WS 2 films. Raman and X-Ray photoelectron spectroscopy (XPS) revealed that the synthesized few-layer WS 2 films are highly crystalline and stoichiometric. Finally, WS 2 films as-deposited on SiO 2 /Si substrates were used to fabricate a backgated Field Effect Transistor (FET) device for the first time using this precursor to demonstrate the electronic functionality of the material and further validate the method.FET from an as-deposited WS 2 film grown by our solution based process with an electron mobility reaching 6.2 × 10 −5 cm 2 /V.s which shows comparable performance to MoS 2 devices fabricated by similar synthesis approaches.

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Highly Scalable Synthesis of MoS₂ Thin Films with Precise Thickness Control via Polymer-Assisted Deposition

Cited by 113 publications

References 38 publications

Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process

Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process

Degradation behaviors and mechanisms of MoS2 crystals relevant to bioabsorbable electronics

Solution-Based Synthesis of Few-Layer WS2 Large Area Continuous Films for Electronic Applications

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Highly Scalable Synthesis of MoS2 Thin Films with Precise Thickness Control via Polymer-Assisted Deposition

Cited by 113 publications

References 38 publications

Enhanced Quality of Wafer‐Scale MoS2 Films by a Capping Layer Annealing Process

Enhanced Quality of Wafer‐Scale MoS2 Films by a Capping Layer Annealing Process

Degradation behaviors and mechanisms of MoS2 crystals relevant to bioabsorbable electronics

Solution-Based Synthesis of Few-Layer WS2 Large Area Continuous Films for Electronic Applications

Contact Info

Product

Resources

About

Highly Scalable Synthesis of MoS₂ Thin Films with Precise Thickness Control via Polymer-Assisted Deposition

Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process

Enhanced Quality of Wafer‐Scale MoS₂ Films by a Capping Layer Annealing Process