Highly sensitive and selective gas sensors using p-type oxide semiconductors: Overview

Kim, Hyo Joong; Lee, Jong Heun

doi:10.1016/j.snb.2013.11.005

Cited by 1,926 publications

(1,102 citation statements)

References 224 publications

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“…Studies on n-and p-type oxide semiconductor gas sensors (internet search of Web of Knowledge). Reprinted with permission from [15].…”

Section: Sensing Materialsmentioning

confidence: 99%

“…There are already many excellent review articles on this topic in which readers can obtain a complete picture of chemoresistive gas sensors research from various perspectives [8][9][10][11][12][13][14][15][16][17][18][19]. In this brief review, a chronological approach is taken in order to not only examine the past, but also to identify key concepts, new materials and technologies, as well as predict innovative ideas for the future.…”

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confidence: 99%

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First Fifty Years of Chemoresistive Gas Sensors

2015

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Abstract:The first fifty years of chemoresistive sensors for gas detection are here reviewed, focusing on the main scientific and technological innovations that have occurred in the field over the course of these years. A look at advances made in fundamental and applied research and leading to the development of actual high performance chemoresistive devices is presented. The approaches devoted to the synthesis of novel semiconducting materials with unprecedented nanostructure and gas-sensing properties have been also presented. Perspectives on new technologies and future applications of chemoresistive gas sensors have also been highlighted.

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“…Studies on n-and p-type oxide semiconductor gas sensors (internet search of Web of Knowledge). Reprinted with permission from [15].…”

Section: Sensing Materialsmentioning

confidence: 99%

mentioning

confidence: 99%

First Fifty Years of Chemoresistive Gas Sensors

2015

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“…Metal oxide semiconductors (MOS) have attracted considerable interest from many researchers due to their unique properties that allow numerous practical applications [1,2]. Among the MOS, zinc oxide (ZnO) and tin oxide (SnO2) are n-type wide band-gap semiconductors (Eg = 3.2 and 3.6 eV, at 300 K) [4,5].…”

Section: Introductionmentioning

confidence: 99%

“…Among the MOS, zinc oxide (ZnO) and tin oxide (SnO2) are n-type wide band-gap semiconductors (Eg = 3.2 and 3.6 eV, at 300 K) [4,5]. These compounds have attracted much interest due to their wide range of applications, mainly as chemoresistors [1,6]. The traditional semiconductor gas sensors (e.g., ZnO, WO3, SnO2, and In2O3) have generally found application for use at temperatures >200 °C, hindering the monitoring of gas composition in an environment containing explosive species since high temperature could trigger an explosion [7].…”

Section: Introductionmentioning

confidence: 99%

ZnO/SnO2 Heterojunctions Sensors with UV-Enhanced Gas-Sensing Properties at Room Temperature

Silva

Lucchini

M’Peko

et al. 2017

Proceedings of Eurosensors 2017, Paris, France, 3–6 September 2017

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Abstract:We report herein the efficiency of microwave-assisted synthesis for obtaining ZnO/SnO2 heterostructures for room-temperature gas-sensing applications. The sensing performances of the traditional oxide materials have been found for applications above 200 °C. However, these temperatures were here reduced to room temperature by considering sensing activity photoactivated by UV light, even for ppb ozone (O3) levels. The heterojunctions exhibited a fast response, total reversibility, and selectivity to oxidizing gases, especially O3 gas. This investigation provides an efficient way to obtain heterostructures exhibiting remarkable properties for practical applications as O3 gas sensor devices.

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“…To date, reports indicate that n-type semiconductor materials, such as SnO 2 [2,3], ZnO [4], and TiO 2 [5] are most studied in gas sensing area. By contrast, a limited amount research works on p-type oxide semiconductor gas sensors have been found, the most studied being CuO, Co 3 O 4 , and NiO [6]. However, some sensor parameters such as gas sensitivity and working temperature still need to be improved.…”

Section: Introductionmentioning

confidence: 99%

Synthesis Characterization of Nanostructured ZnCo2O4 with High Sensitivity to CO Gas

Morán-Lázaro¹,

López–Urías²,

Sandoval³

et al. 2017

Nanostructured Materials - Fabrication to Applications

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In this work, nanostructured ZnCo 2 O 4 was synthesized via a microwave-assisted colloidal method, and its application as gas sensor for the detection of CO was studied. Typical diffraction peaks corresponding to the cubic ZnCo 2 O 4 spinel structure were identified at calcination temperature of 500°C by X-ray powder diffraction. A high degree of porosity in the surface of the nanostructured powder of ZnCo 2 O 4 was observed by scanning electron microscopy and transmission electron microscopy, faceted nanoparticles with a pockmarked structure were clearly identified. The estimated average particle size was approximately 75 nm. The formation of ZnCo 2 O 4 material was also confirmed by Raman characterization. Pellets fabricated with nanostructured powder of ZnCo 2 O 4 were tested as sensors using CO gas at different concentrations and temperatures. A high sensitivity value of 305-300 ppm of CO was measured at 300°C, indicating that nanostructured ZnCo 2 O 4 had a high performance in the detection of CO.

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Highly sensitive and selective gas sensors using p-type oxide semiconductors: Overview

Cited by 1,926 publications

References 224 publications

First Fifty Years of Chemoresistive Gas Sensors

First Fifty Years of Chemoresistive Gas Sensors

ZnO/SnO2 Heterojunctions Sensors with UV-Enhanced Gas-Sensing Properties at Room Temperature

Synthesis Characterization of Nanostructured ZnCo2O4 with High Sensitivity to CO Gas

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