Highly Sensitive and Selective H2S Gas Sensor Fabricated with β-Ga2O3/rGO

Balasubramani, V.; Ahamed, Ahasan; Chandraleka, Saravanan; Kumar, K. Krishna; Kuppusamy, M. R.; Sridhar, T. M.

doi:10.1149/2162-8777/ab9a18

Cited by 21 publications

(7 citation statements)

References 22 publications

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“…The modification of gallium oxide by inclusions of reduced graphene oxide discussed in ref. [30]. Such modification leads to a greater sensitivity to H 2 S, relative to NH 3 , SO 2 , CO 2 and CO -at a concentration of 3 ppm, the sensitivity to H 2 S is ~ 2 times higher compared to other reduced gases.…”

Section: Gas Sensorsmentioning

confidence: 97%

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

Petrenko¹,

Kovach²,

Bauman³

et al. 2021

Rev Adv Mater Tech

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Section: Gas Sensorsmentioning

confidence: 97%

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

Petrenko¹,

Kovach²,

Bauman³

et al. 2021

Rev Adv Mater Tech

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“…By using EIS for a polycrystalline sample like ZnO, we have separated the contribution of each region. EISbased gas sensing has been considered an ultra-sensitive technique to identify and measure different toxic gases [26,29,30]. Their sensing performance has been superior when compared to other conventional techniques.…”

Section: Introductionmentioning

confidence: 99%

Frequency dependent impedance response analysis of nanocrystalline ZnO chemiresistors

P V,

Tom,

Urs

et al. 2023

Nanotechnology

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ZnO is a widely studied gas sensor material and is used in many commercial sensor devices. However, selectivity towards any particular gas remains an issue due to a lack of complete knowledge of the gas sensing mechanism of oxide surfaces. In this paper, we have studied the frequency dependent gas sensor response of ZnO nanoparticles of a diameter of nearly 30 nm. A small rise of synthesis temperature from 85 to 95oC in the solvothermal process, shows coarsening by joining and thereby distinct loss of grain boundaries as seen from transmission electron micrographs. This leads to a substantial reduction in impedance, Z (GΩ to MΩ), and rises in resonance frequency fres (from 1 to 10 Hz) at room temperature. From temperature dependent studies it is observed that the grain boundaries show a Correlated Barrier Hopping (CBH) mechanism of transport and the hopping range in the grain boundary region is typically 1 nm with a hopping energy of 153 meV. On the other hand, within the grain, it shows a change of transport type from low temperature tunneling to beyond 300oC as polaron hopping. The presence of disorder (defects) as the hopping sites. The temperature dependence of fres agrees with different predicted oxygen chemisorbed species between 200 to 400oC. As opposed to the traditional DC response, the AC response in the imaginary part of Z (Z′′) shows gas specific resonance frequencies for each gas, such as NO2, ethanol, and H2. Among the two reducing gases, ethanol and hydrogen; the former shows good dependence on concentration in Z′′ whereas the latter shows a good response in fres as well as capacitance. Thus, the results of frequency dependent response allow us to investigate greater details of the gas sensing mechanism in ZnO, which may be exploited for selective gas sensing.

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“…The literature reports on chemiresistive oxygen concentration sensors based on undoped β-Ga 2 O 3 thin films operating at high temperature (1000 • C) [18,19] and, more recently, on β-Ga 2 O 3 thin films doped with Si, and Cr 2 O 3 operating at a medium temperature (400 • C) [20,21]. The conductivity of thin and thick films of gallium oxide increases in the presence of ethanol, methanol, carbon monoxide, acetone, hydrogen, hydrogen sulfide, and ammonia in the ambient atmosphere [22][23][24]. Moreover, β-Ga 2 O 3 thin films exhibit hydrophobic properties, which is why the humidity of the ambient atmosphere has little effect on their gas sensing properties, even at room temperature [24].…”

Section: Introductionmentioning

confidence: 99%

P-type Inversion at the Surface of β-Ga2O3 Epitaxial Layer Modified with Au Nanoparticles

Krawczyk

Korbutowicz

Szukiewicz

et al. 2022

Sensors

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The electric properties and chemical and thermal stability of gallium oxide β-Ga2O3 make it a promising material for a wide variety of electronic devices, including chemiresistive gas sensors. However, p-type doping of β-Ga2O3 still remains a challenge. A β-Ga2O3 epitaxial layer with a highly developed surface was synthesized on gold electrodes on a Al2O3 substrate via a Halide Vapor Phase Epitaxy (HVPE) method. The epitaxial layer was impregnated with an aqueous colloidal solution of gold nanoparticles with an average diameter of Au nanoparticle less than 5 nm. Electrical impedance of the layer was measured before and after modification with the Au nanoparticles in an ambient atmosphere, in dry nitrogen, and in air containing dimethyl sulfide C2H6S (DMS). After the impregnation of the β-Ga2O3 epitaxial layer with Au nanoparticles, its conductance increased, and its electric response to air containing DMS had been inversed. The introduction of Au nanoparticles at the surface of the metal oxide was responsible for the formation of an internal depleted region and p-type conductivity at the surface.

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Highly Sensitive and Selective H₂S Gas Sensor Fabricated with β-Ga₂O₃/rGO

Cited by 21 publications

References 22 publications

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

Current State of Ga2O3-Based Electronic and Optoelectronic Devices. Brief Review

Frequency dependent impedance response analysis of nanocrystalline ZnO chemiresistors

P-type Inversion at the Surface of β-Ga2O3 Epitaxial Layer Modified with Au Nanoparticles

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