Highly sensitive and ultrafast deep UV photodetector based on aβ-Ga₂O₃nanowire network grown by CVD

Catalyst‐Free Vapor–Solid Deposition Growth of β‐Ga2O3 Nanowires for DUV Photodetector and Image Sensor Application

“…Both values are comparable to or even much higher than that of other β‐Ga 2 O 3 NWs‐ or NBs‐based DUV photodetectors in previous reports working at similar bias voltages (see Table 1 ). In addition, similar to the observations in other photodetectors, both R and EQE declined gradually with increasing light intensity (Figure c), which again manifests the presence of photocurrent recombination loss in the DUV photodetector. Under light illumination with an elevated intensity, the recombination of photocarriers will be accelerated due to increased concentration of charge carriers in the NWs …”

“…To date, a number of DUV photodetectors based on β‐Ga 2 O 3 in the form of either thin films or nanostructures have been successfully developed . Benefiting from quantum confinement effect and remarkable surface/size effect, β‐Ga 2 O 3 nanostructures, in particular 1D β‐Ga 2 O 3 nanowires (NWs) or nanobelts (NBs), can exhibit attractive merits of better optical absorption, improved charge carrier transportation, and increased surface states to interact with surroundings, over their thin films' counterpart .…”

“…A detector made of individual NB exhibited a responsivity of 39.2 A W −1 under 250 nm irradiation, which could be further improved by doping the NBs with In element . Generally, these 1D β‐Ga 2 O 3 nanostructures are grown by a vapor–liquid–solid (VLS) mechanism, which is characterized by using noble metal nanoparticles (the most common catalyst is Au) as growth catalysts . The use of metallic catalyst indeed can lead to high‐quality material.…”

Deep Ultraviolet Copper(I) Thiocyanate (CuSCN) Photodetectors Based on Coplanar Nanogap Electrodes Fabricated via Adhesion Lithography

“…These often require visible-blind detectors showing high sensitivity as well as increased stability and reproducibility. Current research on DUV photodetectors is based mainly on wide band gap inorganic materials, such as silicon carbide (SiC) 2,3 , diamond 4,5 , gallium nitride (GaN) 6 and gallium oxide (β-Ga2O3) [7][8][9][10][11][12][13] . In an effort to improve the device performance a recent study used the intermediate band structure semiconductor BixSn1-xO2 to increase the detector's responsivity while decreasing the dark current albeit with adverse effect on the visible-blind nature of the device 14 .…”

Solar-blind ultraviolet photodetector based on (LaAlO3)0.3-(SrAl0.5Ta0.5O3)0.7 single crystal

“…7,8 Because most photons in the wavelength shorter than 280nm have been strongly absorbed by the stratospheric ozone layer, 9 solar-blind ultraviolet photodetectors, compared to visible-blind ultraviolet photodetectors, show superior advantages with lower false alarm rate and higher sensitivity under sun or room illumination. Recently, solar-blind ultraviolet photodetector based on wide bandgap semiconductors, such as diamond, 1,2,10 BN, 11,12 AlGaN,7 Ga 2 O 3 , [13][14][15] have been widely investigated. However, the fabrication processes for the photodetectors above are expensive and complex.…”