Highly Sensitive Band Alignment of Graphene/Mosi2n4 Heterojunction Via External Electric Field

Biaxial strain modulated electronic structures of layered two-dimensional MoSiGeN4 Rashba systems

“…17 As a rare class of multi-atomic layer materials, plenty of regulation methods are employed to modulate the electronic structure and physical properties of 2D MSN and other MA 2 Z 4 systems, such as atomic doping, 18 strain engineering, 19,20 and electric field modulation. 20 In addition, the construction of heterostructures or stacking layers is always used to broaden the tunability of physical properties, including CrCl 3 /MSN heterostructures, 21 graphene/MSN heterojunctions, 22 and MoSH/ MSN heterostructures. 23 Notably, the electrical properties of VSi 2 N 4 systems are strongly affected by stacking layers.…”