Thermal
quenching performance is a huge challenge in the application
of phosphor materials. In this paper, the relationship between the
energy gap of luminescent ions and the thermal quenching activation
energy (ΔE) is discussed from the angle of
energy-level splitting for the first time. When the proportion of
coordination cations (Nb–Ta) in the matrix is adjusted, the
dissimilarity in bond lengths and bond angles of the two crystal configurations
(NbO6/TaO6) makes the crystal electron cloud
expand, the decrease in atomic orbital overlap reduces the covalency,
and the nephelauxetic effect enlarges the bond length between the
dopant and the ligand, thus decreasing the crystal field splitting
energy of trivalent bismuth ions, which weakens the splitting degree
of the P energy level, leading to an increase in the energy gap from
3.854 to 4.101 eV. Interestingly, the thermal quenching performance
of YNb1–x
Ta
x
O4:Bi3+ (YNTO:Bi3+) also
changes with the Nb–Ta ratio, and the thermal quenching activation
energy is positively correlated with the energy-gap value. Guided
by the density functional theory calculations on the ligand structure,
we establish the functional relationship between the energy-gap value
and ΔE; the tuning of the thermal quenching
activation energy of the Bi-doped phosphors from 0.473 to 0.543 eV
is realized by controlling the ratio of Nb5+/Ta5+. The Bi3+–Eu3+ double-doped white-light-emitting
phosphors prepared according to this mechanism can still emit warm
white light at 463 K. The topological chemical design of the ligand
configuration realizes the modulation of the thermal quenching activation
energy, and this method can be used as a model to design various novel
ΔE-adjustable fluorescent powder materials.