Two-dimensional (2D)
materials have got extensive attention for
multifunctional device applications in advanced nanoelectronics and
optoelectronics, such as field-effect transistors, photodiodes, and
solar cells. In our work, we fabricated MoTe
2
–MoS
2
van der Waals heterostructure photodetectors with great performance
using the mechanical exfoliation method and restack technique. It
is demonstrated that our MoTe
2
–MoS
2
heterostructure
photodetector device can operate without bias voltage, possessing
a low dark current (10 pA) and high photocurrent on/off ratio (>10
4
). Importantly, the room temperature photoresponsivity of
the MoTe
2
–MoS
2
photodetector can reach
110.6 and 9.2 mA W
–1
under λ = 532 and 1064
nm incident laser powers, respectively. Our results indicate that
the van der Waals heterostructure based on 2D semiconducting materials
is expected to play an important role in nanoscale optoelectronic
applications.