Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications

Umezawa, Toshimasa; Akahane, Kouichi; Yamamoto, Naokatsu; Kanno, Atsushi; Kawanishi, Tetsuya

doi:10.1109/jstqe.2014.2321288

Cited by 18 publications

(6 citation statements)

References 20 publications

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“…The R i spectra are almost same-shaped with peaks at ≈650 nm, irrespective of n D , but its magnitude is maximized at n D = 20 × 10 −3 M . These behaviors are almost not changed for other biases except −1 V. These R i values are much larger than those of metalcontact-based SQD [ 29 ] and II-VI-QD [ 30,31 ] PDs. The R i spectra were also measured for graphene/≈4 nm SiO 2 /n-Si structures and were found to be very similar to those of commercially available Si PDs (Figure S14, Supporting Information), suggesting that the photoresponse of the structures without SQDs is strongly infl uenced by the Si substrate.…”

Section: Communicationmentioning

confidence: 81%

“…Quantum effi ciency (QE) was also estimated for various λ . [ 30,34 ] Noise equivalent power (NEP) expressed as [ 35 ] NEP = (ͳ I n 2 ʹ) 1/2 / R i , where ͳ I n 2 ʹ is the time average of the squared total noise current ( Figure S15, Supporting Information), was calculated from the spectral R i data in Figures 2 d and S13 (Supporting Information). [ 32 ] The QE in the visible range (≈600 nm) reaches ≈72% at n D = 20 × 10 −3 M , much larger than those reported for graphene/bulk-Si, [ 11 ] metal/SQD, [ 33 ] and metal/II-VI-QD PDs.…”

Section: Communicationmentioning

confidence: 99%

“…[ 32 ] The QE in the visible range (≈600 nm) reaches ≈72% at n D = 20 × 10 −3 M , much larger than those reported for graphene/bulk-Si, [ 11 ] metal/SQD, [ 33 ] and metal/II-VI-QD PDs. [ 30,34 ] Noise equivalent power (NEP) expressed as [ 35 ] NEP = (ͳ I n 2 ʹ) 1/2 / R i , where ͳ I n 2 ʹ is the time average of the squared total noise current ( Figure S15, Supporting Information), was calculated from the spectral R i data in Figures 2 d and S13 (Supporting Information).…”

Section: Communicationmentioning

confidence: 99%

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Graphene/Si‐Quantum‐Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect

Shin

Kim

et al. 2015

Advanced Materials

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Graphene/Si quantum dot (QD) heterojunction diodes are reported for the first time. The photoresponse, very sensitive to variations in the size of the QDs as well as in the doping concentration of graphene and consistent with the quantum-confinement effect, is remarkably enhanced in the near-ultraviolet range compared to commercially available bulk-Si photodetectors. The photoresponse proves to be dominated by the carriertunneling mechanism.

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Section: Communicationmentioning

confidence: 81%

Section: Communicationmentioning

confidence: 99%

Section: Communicationmentioning

confidence: 99%

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Graphene/Si‐Quantum‐Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect

Shin

Kim

et al. 2015

Advanced Materials

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“…The values of R and EQE at 1600 nm were calculated to be 6.5 × 10 3 A W −1 and 5.04 × 10 5 % at a bias voltage of 0.5 V, respectively. They are higher than those of conventional infrared photodetectors constructed with InGaAs quantum dots and thin films [ 26 , 27 ].…”

Section: Resultsmentioning

confidence: 99%

Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors

Fan

et al. 2015

Nano-Micro Lett.

134

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InGaAs is an important bandgap-variable ternary semiconductor which has wide applications in electronics and optoelectronics. In this work, single-crystal InGaAs nanowires were synthesized by a chemical vapor deposition method. Photoluminescence measurements indicate the InGaAs nanowires have strong light emission in near-infrared region. For the first time, photodetector based on as-grown InGaAs nanowires was also constructed. It shows good light response over a broad spectral range in infrared region with responsivity of 6.5 × 103 A W−1 and external quantum efficiency of 5.04 × 105 %. This photodetector may have potential applications in integrated optoelectronic devices and systems.Electronic supplementary materialThe online version of this article (doi:10.1007/s40820-015-0058-0) contains supplementary material, which is available to authorized users.

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“…In contrast, quantum dot (QD) is an extremely promising material or structure for high‐performance optical devices owing to its delta function‐like density of states . Several groups have reported that laser diodes (LDs), semiconductor optical amplifiers (SOAs), and photodiodes (PDs) that utilize QD structures have displayed high performance in terms of high thermal stability, low threshold, wide operation bandwidth, and ultra‐fast response . In our previous studies, employing the strain compensation technique, we successfully fabricated QD‐SOAs and QD‐LDs in the 1.55 μm‐band grown on an InP(311)B substrate, which enables highly stacked QD structure up to more than 300 layers, and demonstrated that ultra‐fast operation over 220 Gb/s class speed of QD‐SOA and a characteristic temperature ( T 0 ) of more than 2000 K of QD‐LD utilizing a delta‐doping method of p‐dopants, could be achieved.…”

Section: Introductionmentioning

confidence: 99%

Influence and its Optimal Design of Number of Stacked Layer in Quantum‐Dot Lasers

Matsumoto

Akahane

Umezawa

et al. 2018

Phys. Status Solidi A

Self Cite

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This study deals with quantum dot laser-diodes (QD-LDs). The influence of highly stacked quantum dot (QD) layers in QD-LDs on the laser characteristics through experiments and numerical calculations is reported and the optimal design for the QD-stacked layer numbers is indicated. By introducing new concepts, the previously reported carrier rate equations are modified in order to include the effect of the stacked QD layer numbers. It is confirmed that the threshold current and slope efficiency between fabricated and calculated QD-LDs are almost the same. Considering low threshold current, high output power, and high slope efficiency, the optimal design of the QD-stacked layer number in our QD-LD is supposed to be 14. With this, a threshold current of 38 mA, maximum optical output power of 22.7 mW, and slope efficiency of 0.28 W/A can be obtained from the QD-LD. equipment such as industrial equipment and sensors via the Internet, Machine to Machine (M2M) technology, which shares information between industrial machines, and the edge computing, which instantaneously controls the IoT equipment in real time with edge routers, have attracted attention as crucial techniques in the field of information, communication, and industries. In order to establish such technologies, it is essential not only to develop the technologies of upper layers such as application and architecture, but also to further improve the communication capacity of the core/metro optical communication network, optical/wireless communication in access network, and the network in data centers.The traffic growth of data centers and access networks including wireless links is especially higher than in other networks [1] because the connection from the Internet to individual users is mostly based on wireless communications. Therefore, more convenient communication and connectivity are expected in the next generation communication services such as beyond 5G mobiles. In order to realize such a large capacity data center and access network, novel photonic integrated circuits (PICs), which enable ultra-fast and large capacity communication, are indispensable, [2][3][4][5][6][7][8][9][10][11][12][13] besides improving communication capacity owing to newly developed modulation and system technologies. [14][15][16][17][18] In addition, characteristics such as low cost and energy consumption, and thermal stability at high temperatures are essential if the PICs are to be integrated with other electronic devices such as large-scale integrated circuits (LSIs). The temperature stability is especially important because heat diffused from LSIs causes a high surrounding temperature, which is detrimental to the operating conditions of PICs.In contrast, quantum dot (QD) is an extremely promising material or structure for high-performance optical devices owing to its delta function-like density of states. [19] Several groups have reported that laser diodes (LDs), [20][21][22][23] semiconductor optical amplifiers (SOAs), [24][25][26] and photodiodes (PDs) [27] that utilize...

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Highly Sensitive Photodetector Using Ultra-High-Density 1.5-μm Quantum Dots for Advanced Optical Fiber Communications

Cited by 18 publications

References 20 publications

Graphene/Si‐Quantum‐Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect

Graphene/Si‐Quantum‐Dot Heterojunction Diodes Showing High Photosensitivity Compatible with Quantum Confinement Effect

Single-Crystalline InGaAs Nanowires for Room-Temperature High-Performance Near-Infrared Photodetectors

Influence and its Optimal Design of Number of Stacked Layer in Quantum‐Dot Lasers

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