Highly Sensitive Photoelectric Detection and Imaging Enhanced by the Pyro‐Phototronic Effect Based on a Photoinduced Dynamic Schottky Effect in 4H‐SiC

Abstract

Silicon carbide (SiC), one of the third‐generation semiconductor materials with excellent electrical and optoelectronic properties, is ideal for high light‐sensing performance. Here, a self‐powered SiC ultraviolet (UV) photodetector (PD) is constructed with wider applicability and higher commercialization potential. The great performance of the PD is realized by a remarkable photoinduced dynamic Schottky effect derived from the symbiotic modulation of Schottky and Ohmic contact. Using the pyro‐phototronic effect that exists in the N‐doped 4H‐SiC single crystal PDs, a fast pyroelectric response time of 0.27 s is achieved, which is almost ten times shorter than that obtained from the steady‐state signal under UV illumination. The maximal transient photoresponsivity reaches 9.12 nA mW−1, which is ≈20% higher than the conventional photoelectric signal. Moreover, different regions of the 4H‐SiC centimeter‐scale chip output distinct signals under UV illumination, demonstrating efficient optical imaging and information transmission capabilities of this device. This work not only reveals the fundamental optoelectronic physics lying in this vital third‐generation semiconductor, but also sheds light on its potential photosensing applications for large‐scale commercialization.

High-Performance Ultraviolet Photodetector Based on Single-Crystal Integrated Self-Supporting 4H-SiC Nanohole Arrays

“…This phenomenon mainly originates from the lattice distortion within the SiC singlecrystal structure and the existing N dopants. 26 2a reveal that the dominant elements in the sample are C, Si, O, N, and F, respectively. The presence of element F is mainly attributed to the residue of the HF solution on the wafer surface.…”

“…This phenomenon mainly originates from the lattice distortion within the SiC singlecrystal structure and the existing N dopants. 26 Figure 1g illustrates the Raman spectra of the original SiC sheet and the etched nanoarray film, indicating that the detected six peaks can be assigned to E 2 longitudinal acoustic mode (LA, 197 cm −1 ), E 2 transverse acoustic mode (TA, 204 cm −1 ), A 1 longitudinal acoustic mode (LA, 610.5 cm −1 ), E 2 transverse optical mode (TO, 777 cm −1 ), E 1 transverse optical mode (TO, 795 cm −1 ), and A 1 lateral optical mode (LO, 967 cm −1 ), respectively. The observed peaks of the acoustic modes are derived from the vibration of Si−Si, while the peaks of the optical modes originate from the vibration of Si−C in the 4H-SiC single-crystal structure.…”

“…However, the (101̅1) peak shifts to a higher angle, as shown in Figure S1 in the Supporting Information. This phenomenon mainly originates from the lattice distortion within the SiC single-crystal structure and the existing N dopants Figure g illustrates the Raman spectra of the original SiC sheet and the etched nanoarray film, indicating that the detected six peaks can be assigned to E 2 longitudinal acoustic mode (LA, 197 cm –1 ), E 2 transverse acoustic mode (TA, 204 cm –1 ), A 1 longitudinal acoustic mode (LA, 610.5 cm –1 ), E 2 transverse optical mode (TO, 777 cm –1 ), E 1 transverse optical mode (TO, 795 cm –1 ), and A 1 lateral optical mode (LO, 967 cm –1 ), respectively.…”

Photogated Synaptic Transistors Based on the Heterostructure of 4H-SiC and Organic Semiconductors for Neuromorphic Ultraviolet Vision

“…As a typical wide-bandgap semiconductor, 4H-SiC is an ideal candidate for UV-responsive synaptic devices due to its intrinsic wide bandgap (3.3 eV), strong UV light absorption, UV radiation robustness, and high thermal conductivity . 4H-SiC has been already used in UV photodetectors, − position-dependent photodetectors, and electronic synapses …”

The High Performance of 4H-SiC for the Photodetector in High-speed Optocoupler

“…The spin-polarization was considered in all calculations. We set the cutoff energy to be 450eV and a Monkhorst-Packmesh of 2×2×2 k-points to sample the two-dimensional Brilliouin zone for the geometry optimizations and electronic structure calculations [8][9]. All atoms were fully relaxed until the convergence criteria of energy and force were less than 1×10-5eV and 0.05 eV/ Å, respectively.…”