2014
DOI: 10.1103/physrevapplied.2.024005
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Highly Sensitive Superconducting Quantum-Interference Proximity Transistor

Abstract: We report the design and implementation of a high-performance superconducting quantum-interference proximity transistor based on aluminum-copper technology. With the adoption of a thin and short copper nanowire, we demonstrate full phase-driven modulation of the proximity-induced minigap in the normalmetal density of states. Under optimal bias, we record unprecedentedly high flux-to-voltage (up to 3 mV=Φ 0 ) and flux-to-current (exceeding 100 nA=Φ 0 ) transfer function values at subkelvin temperatures, where Φ… Show more

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Cited by 47 publications
(90 citation statements)
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“…This effect allows us to perform magnetometric measurement. In twoterminal SQUIPTs, high sensitivities have been demonstrated [1,5]. In the following, we evaluate the sensitivity of the ω-SQUIPT.…”
Section: Magnetometric Characteristics Of the ω-Squiptmentioning
confidence: 99%
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“…This effect allows us to perform magnetometric measurement. In twoterminal SQUIPTs, high sensitivities have been demonstrated [1,5]. In the following, we evaluate the sensitivity of the ω-SQUIPT.…”
Section: Magnetometric Characteristics Of the ω-Squiptmentioning
confidence: 99%
“…For an Al-Cu-based device, these parameters correspond to L i ≈ 90 nm and L i ≈ 30 nm, respectively, and a contact length in each arm l i ≈ 20 nm. All these values are achievable with state-of-the-art nanofabrication techniques [5,37]. Considering an electrical setup where the ω-SQUIPT is biased with a proper current I b , the voltage drop depends on flux, giving the flux to voltage characteristics V ( ) (see Fig.…”
Section: Magnetometric Characteristics Of the ω-Squiptmentioning
confidence: 99%
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“…It would not be possible to make justice to the vast literature on the subject; some examples are Refs. [6][7][8][9][10][11][12][13][14][15][16][17][18].…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, the probability for electrons to tunnel between N and S R depends on the sign of the spin. The device resembles the superconducting quantum interference proximity transistor (SQUIPT) [8][9][10][11][12] which has been well-studied in several experiments; the crucial structural difference in our device is that the thermoelectric transistor lies in the presence of the FI layer.…”
mentioning
confidence: 99%