Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction

Jeon, Youngeun; Jung, Sungchul; Jin, Huiqing; Mo, Kyuhyung; Kim, Kyung Rok; Park, Wook-Ki; Han, Sang‐Min; Park, Kibog

doi:10.1038/s41598-017-16923-z

Cited by 7 publications

(3 citation statements)

References 30 publications

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“…A similar behavior was noticed in an edge metal-semiconductor-metal (EMSM) lateral junction based on Ni/Au/SiC/Ni (see, e.g. [45],). The voltage response of this heterostructure increases under THz radiation due to the enhanced nonlinearity of I-V characteristics at definite applied biases.…”

Section: Elliptically Polarized Radiationsupporting

confidence: 71%

THz polarization-dependent response of antenna-coupled HgCdTe photoconductors under an external constant electric field

Сизов¹,

Tsybrii²,

Danilov³

et al. 2021

Semicond. Sci. Technol.

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The photoresponse of antenna-coupled Hg 1-x Cd x Te (x ≈ 0.201) narrow-gap epitaxially grown photoconductors with normal band ordering having large spin-orbit coupling and being irradiated by the normal to the photoconductor surface terahertz (THz) radiation (linearly or circularly polarized), is investigated at T = 80 and 300 K. The oscillations of polarized photoresponse in biased and unbised structures were revealed. In experiments, Hg 1-x Cd x Te layers (point group 43m (T d )) grown on (013) GaAs substrates were used. In biased structures, to the ordinary charge current and Rashba spin splitting current in zero electric field, an additional polarized current, which grows with the external electric field strength, arises. Presumably, the oscillating photoresponses under polarized THz radiation in these unbiased and biased structures are connected with the circular and linear photogalvanic effects without and with an external electric field. The observed features of the polarized dependent photoresponse can be important for spintronics applications at elevated temperatures.

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Section: Elliptically Polarized Radiationsupporting

confidence: 71%

THz polarization-dependent response of antenna-coupled HgCdTe photoconductors under an external constant electric field

Сизов¹,

Tsybrii²,

Danilov³

et al. 2021

Semicond. Sci. Technol.

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“…The nonlinear behaviour of the I−V curve is important for device application like electromagnetic radiation detectors. Jeon et al [37] have shown that a sensitive THz detector based on metal-semiconductor-metal junction with non-linear I−V characteristics will have sensitivity dependent on the ratio I″/I′, where I″ and I′ are the second and first derivatives of I with respect to V, respectively. The rectified voltage output of THz detectors is proportional to the ratio I″/I′.…”

Section: Electrical Conductivity Measurementsmentioning

confidence: 99%

Transition in nanoscale electrical conductivity in the Langmuir-Blodgett film of a novel liquid crystalline oligomer

et al. 2020

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We have studied the nanoscale electrical conductivity of a monolayer film of a novel star shaped liquid crystalline molecule, hexatriphenylene substituted anthraquinone (AQD6). The molecule has a central core of electron deficient anthraquinone moiety connected to six electron rich triphenylene moieties by flexible alkyl chains. The monolayer formed at air-water interface was transferred onto the solid substrates by Langmuir-Blodgett (LB) technique and its surface topography was imaged using an atomic force microscope (AFM). The limiting area obtained from the surface pressure-area per molecule isotherm and the topography of the AFM images suggest that the anthraquinone moiety of the AQD6 molecule is organized in face-on configuration on the substrate and the triphenylene moieties are in edge-on configuration extended away from the substrate. We have studied the electrical conductivity of the AQD6 monolayer deposited on gold coated silicon substrate using a current sensing AFM. Analysis of current (I)−voltage (V ) characteristics of the metal-monolayer film-metal junction showed a transition from direct tunneling to an injection tunneling. Further, we have estimated the barrier height and the effective mass of electron in the metal-monolayer film-metal junction.

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“…Since the residual resist can be up to 1 to 2nm thick [6], it is also prohibitive to use graphene in surface-sensitive plasmonic applications [7] or to fabricate reliable tunneling barriers with other graphene or metal electrodes [8]. The tunneling is a fast transport mechanism that could be used for high-speed graphene rectifiers, as demonstrated for metal-insulator-metal diodes [9], with the advantage of atomic thickness, smaller capacitance, and faster response times. However, the graphene-oxidemetal interface must be sharp on the nanometer length scale to fully exploit its potential for electro-optical applications [10].…”

Section: Introductionmentioning

confidence: 99%

Wet etching of gold on graphene for high-quality resist-free graphene surfaces

Kunc,

Shestopalov,

et al. 2023

Nano Ex.

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Wet etching of gold on graphene is challenging due to the weak adhesion of the resist mask to graphene. We report an operating procedure for alkali ion-free wet etching of gold on graphene using a mixture of hydrochloric and nitric acids (aqua regia) with a high lateral resolution down to 100~nm. We investigate the role of positive and negative resists, electron beam lithography (EBL) dose, hard-bake, oxygen etching, aging, and sensitivity to the etch parameters, such as the freshness of dilute aqua regia, etch time, and the order of etched samples. The negative-tone resist provides the best results. The over-dosed EBL exposure can enhance the resist adhesion, as hard-bake below the glass-transition temperature and well-defined wet etch of the resist-residua-free gold surface. We also present a cleaning procedure to avoid bubble formation after the hard bake. Our results demonstrate that wet etching of gold on graphene using aqua regia is a viable method for achieving high-quality resist-free graphene surfaces. This method has potential applications in graphene nanoelectronics and nanophotonics, where high-quality graphene surfaces are essential for device performance.

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Highly-Sensitive Thin Film THz Detector Based on Edge Metal-Semiconductor-Metal Junction

Cited by 7 publications

References 30 publications

THz polarization-dependent response of antenna-coupled HgCdTe photoconductors under an external constant electric field

THz polarization-dependent response of antenna-coupled HgCdTe photoconductors under an external constant electric field

Transition in nanoscale electrical conductivity in the Langmuir-Blodgett film of a novel liquid crystalline oligomer

Wet etching of gold on graphene for high-quality resist-free graphene surfaces

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