Highly sensitive ultraviolet detector using a ZnO/Si layered SAW oscillator

Wei, Ching-Liang; Chen, Ying–Chung; Cheng, Chien‐Chuan; Kao, K. C.; Cheng, Da-Long; Cheng, Po-Shu

doi:10.1016/j.tsf.2009.07.207

Cited by 68 publications

(42 citation statements)

References 21 publications

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“…The surface of all the ZnO films is very smooth, and the RMS roughness of the films is less than 11 nm, comparable to those obtained from the films deposited on solid substrates. 28,29 Xu et al 30 pointed that when the film is thin, the growth mode of the ZnO grains is dominated by a vertical growth mode, and the RMS roughness increases with increase in thickness; when the thickness reaches a critical point, the growth mode changes from a vertical growth mode to a lateral mode. The lateral growth makes the ZnO film much denser with large grain sizes.…”

Section: A Influence Of Zno Deposition Parameters On Crystal Structurementioning

confidence: 99%

Crystalline structure effect on the performance of flexible ZnO/polyimide surface acoustic wave devices

Zhou

Jin

et al. 2013

Journal of Applied Physics

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This paper reports the fabrication of flexible surface acoustic wave (SAW) devices on ZnO/polyimide substrates and investigation of the effects of the deposition conditions, crystal quality, and film thickness of the ZnO films on the performance of the SAW devices. The deposition pressure has a significant effect on the crystal quality of the ZnO film, and which in turn affects the transmission of the SAW devices strongly. The device performance improves greatly and is mainly attributed to the better crystal quality of the film deposited at high pressure. The performance of the SAW devices also improves significantly with increase in ZnO film thickness, owing to the reduced defects and improved piezoelectric effect for the films with large grain sizes and better crystallinity as the film thickness increases. Flexible SAW devices with a resonant frequency of 153 MHz, a phase velocity of 1836 m/s, and a coupling coefficient of 0.79% were obtained on the ZnO film of 4 μm thickness, demonstrated its great potential for applications in electronics and microsystems.

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Section: A Influence Of Zno Deposition Parameters On Crystal Structurementioning

confidence: 99%

Crystalline structure effect on the performance of flexible ZnO/polyimide surface acoustic wave devices

Zhou

Jin

et al. 2013

Journal of Applied Physics

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“…There are also other substrates for fabricating ZnO based thin film high frequency SAW devices, such as diamond, diamond-like carbon films, SiC [74][75][76][77]. Other substrates suitable for the deposition of TM-doped ZnO films are Si [78,79], AlN/Si [80,81], SiO 2 /Si [82][83][84], and LiNbO 3 [85].…”

Section: Film Growth Of Tm-doped Znomentioning

confidence: 99%

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Pan

Luo

Yang

et al. 2011

Sci. China Technol. Sci.

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In recent years, with the growing concerns on environmental protection and human health, new materials, such as lead-free piezoelectric materials, have received increasing attention. So far, three types of lead-free piezoelectric systems have been widely researched, i.e., perovskites, bismuth layer-structured ferroelectrics, and tungsten-bronze type ferroelectrics. This article presents a new type of environmental friendly piezoelectric material with simple structure, the transition-metal(TM)-doped ZnO. Through substituting Zn 2+ site with small size ion, we obtained a series of TM-doped ZnO with giant piezoresponse, such as Zn 0.975 V 0.025 O of 170 pC/N, Zn 0.94 Cr 0.06 O of 120 pC/N, Zn 0.913 Mn 0.087 O of 86 pC/N and Zn 0.988 Fe 0.012 O of 127 pC/N. The tremendous piezoresponses are ascribed to the introduction of switchable spontaneous polarization and high permittivity in TM-doped ZnO.The microscopic origin of giant piezoresponse is also discussed. Substitution of TM ion with small ionic size for Zn 2+ results in the easier rotation of noncollinear TM-O1 bonds along the c axis under the applied field, which produces large piezoelectric displacement and corresponding piezoresponse enhancement. Furthermore, it proposes a general rule to guide the design of new wurtzite semiconductors with enhanced piezoresponses. That is, TM-dopant with ionic size smaller than Zn 2+ substitutes for Zn 2+ site will increase the piezoresponse of ZnO significantly. Finally, we discuss the improved performances of some TM-doped ZnO based piezoelectric devices.

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“…ZnO can be used for preparing transparent conducting contacts for solar cells, surface acoustic wave (SAW) devices and sensors [1,2]. Moreover, ZnO has increased interest in its various applications for short wavelength optoelectronics, transparent electronic materials [3][4][5] and tip materials of scanning probe microscopy.…”

Section: Introductionmentioning

confidence: 99%

Influence of deposition temperature on structural, optical and electrical properties of sputtered Al doped ZnO thin films

Mosbah

Aida

2012

Journal of Alloys and Compounds

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Highly sensitive ultraviolet detector using a ZnO/Si layered SAW oscillator

Cited by 68 publications

References 21 publications

Crystalline structure effect on the performance of flexible ZnO/polyimide surface acoustic wave devices

Crystalline structure effect on the performance of flexible ZnO/polyimide surface acoustic wave devices

Giant piezoresponse and promising application of environmental friendly small-ion-doped ZnO

Influence of deposition temperature on structural, optical and electrical properties of sputtered Al doped ZnO thin films

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