Highly Stable Ga2O3-In2O3-ZnO TFT for Active-Matrix Organic Light-Emitting Diode Display Application

Kim, Chang Jung; Kang, Dong‐Hun; Song, Ihun; Park, Jae Chul; Lim, Hyung‐Kyu; Kim, Sunil; Lee, Eunha; Chung, Ranju; Lee, Jae Cheol; Park, Young-Soo

doi:10.1109/iedm.2006.346769

Cited by 23 publications

(27 citation statements)

References 10 publications

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“…The deposited a-GIZO shows a homogeneous amorphous state confirmed by the X-ray diffraction data presented in a previous publication [17]. Even as the process temperature increases to 600…”

Section: Fabrication Processsupporting

confidence: 76%

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Yin

Kim

Lim

et al. 2008

IEEE Trans. Electron Devices

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Abstract-Currently, both high-density 3-D stacking nonvolatile (NV) memory and embedded NV memory in advanced systems on panel (SOPs) urgently demand the assistance of new and functional transition metal-oxide materials. This is to overcome serious fabrication issues encountered in the use of conventional Si or poly-crystalline Si materials, as well as to increase storage density with lower process cost. This paper reports the fully functional NV memory structure operated by an ionic amorphous oxide semiconductor with a wide energy band gap (> 3.0 eV) in a Ga 2 O 3 -In 2 O 3 -ZnO (GIZO) system under low process temperature (< 400• C) while being combined with various metal-oxide materials of Al 2 O 3 , GIZO, and Al 2 O 3 as the electron charge's tunneling, storage, and blocking layers, respectively. The different methods of memory programs and, especially, the unique erase characteristics caused by a much wider band gap than Si were intensively being investigated, and as a result, excellent electrical results of a large program/erase window over 3.8 V at a pulse time of 10 ms are achieved.Index Terms-Amorphous, gallium indium zinc oxide (GIZO), memory, nonvolatile (NV), oxide, program/erase (P/E), thin-film transistor (TFT).

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“…The deposited a-GIZO shows a homogeneous amorphous state confirmed by the X-ray diffraction data presented in a previous publication [17]. Even as the process temperature increases to 600…”

Section: Fabrication Processsupporting

confidence: 76%

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Yin

Kim

Lim

et al. 2008

IEEE Trans. Electron Devices

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“…6 a-IGZO is considered a prime candidate for these applications due to its relatively high electron mobilities >10 cm 2 /Vs, 2 its good uniformity over large areas, its high optical transmission, above 75% over the visible range, [7][8][9] and its low processing temperatures, <200 C. 10 To demonstrate the applicability of a-IGZO, several prototype devices have already been produced, including both rigid and flexible active matrix organic light emitting diode (AMOLED) displays, [11][12][13] e-ink displays, [14][15][16] and radio frequency identification (RFID) tags. [17][18][19] The deposition of a-IGZO has been investigated through several routes, including pulsed laser deposition (PLD), 2,20 solution processing, [21][22][23] atomic layer deposition (ALD), 24 and sputtering.…”

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confidence: 99%

Densification of a-IGZO with low-temperature annealing for flexible electronics applications

Troughton

Downs

Price

et al. 2017

Applied Physics Letters

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The full-text may be used and/or reproduced, and given to third parties in any format or medium, without prior permission or charge, for personal research or study, educational, or not-for-prot purposes provided that:• a full bibliographic reference is made to the original source • a link is made to the metadata record in DRO • the full-text is not changed in any way The full-text must not be sold in any format or medium without the formal permission of the copyright holders.Please consult the full DRO policy for further details. Amorphous InGaZnO (a-IGZO) thin-film transistors are a leading contender for active channel materials in next generation flat panel displays and flexible electronics. Improved electronic functionality has been linked to the increased density of a-IGZO, and while much work has looked at hightemperature processes, studies at temperatures compatible with flexible substrates are needed. Here, compositional and structural analyses show that short term, low-temperature annealing (<6 h) can increase the density of sputtered a-IGZO by up to 5.6% for temperatures below 300 C, which is expected to improve the transistor performance, while annealing for longer times leads to a subsequent decrease in density due to oxygen absorption. Published by AIP Publishing.

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“…Canon demonstrated in 2006 that a high performance transistor (mobility, >10 cm 2 V À1 s À1 ; gate swing, 0.2 V decade À1 ) can be achieved using RF sputtering and by using large-area deposition rather than PLD [61]. Major display producers such as LG and Samsung began performing research and development on oxide TFTs for AMOLEDs in 2006 [62,63]. The first AMOLED display was released by LG Electronics in 2007 [64].…”

Section: Polycrystalline Simentioning

confidence: 99%

Oxide Semiconductors: From Materials to Devices

Fortunato

Barquinha

Gonçalves

et al. 2010

Transparent Electronics

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Highly Stable Ga2O3-In2O3-ZnO TFT for Active-Matrix Organic Light-Emitting Diode Display Application

Cited by 23 publications

References 10 publications

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Program/Erase Characteristics of Amorphous Gallium Indium Zinc Oxide Nonvolatile Memory

Densification of a-IGZO with low-temperature annealing for flexible electronics applications

Oxide Semiconductors: From Materials to Devices

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