Highly symmetric Lewis base coordinated with Sn2+ for reducing voltage loss and retarding oxidation in tin-halide perovskite solar cells

Lead‐Free Tin‐Based Perovskite Solar Cells with over 1600 Hours Stability in N2 Achieved by Multifunctional Additive

“…Hole‐only devices with structure of ITO/PEDOT:PSS/perovskite/Au were prepared and the trap density can be estimated from the equation: N t = 2 εε 0 V TFL /qL 2 , where ε is static dielectric constant of perovskite, ε 0 is vacuum permittivity, q is elementary charge, and L is the perovskite layer thickness. [ 29,30 ] With the introduction of Ze, the calculated trap density decreased from 18.12 × 10 15 to 16.10 × 10 15 cm −3 , indicating the remarkable passivation effect of Ze (Figure 4c), which is beneficial for the enhancement of V OC and FF. Electrochemical impedance spectroscopy (EIS) measurements were performed to evaluate the charge carrier transport characteristics of the devices (Figure 4d).…”

Tuning the phase separation of PEDOT:PSS affords efficient lead-free perovskite solar cells

“…S12, S13 and Tables S4-S6, ESI †). It can be concluded that the target devices had a lower density of trap states 31,32 (Fig. 3a).…”

The nonhalides in perovskite solar cells

“…Their great merits such as high carrier mobility, high absorption coefficient, low carrier recombination rate, low exciton binding energy, high defect tolerance, and tunable band-gap properties enabled an outstanding performance within a decade. [3][4][5][6] The certified power conversion efficiency (PCE) has been pushed to 25.7% with superior longterm operational stability. 7 In general, the halide perovskite has a ABX 3 scaffold, where the A site denotes a monovalent cation (such as CH 3 NH 3 + (MA + ), CH(NH 2 ) 2 + (FA + ), and Cs + ), the B site denotes a divalent metal cation (such as Pb 2+ and Sn 2+ ), and the X site denotes a monovalent anion (such as I À , Cl À , and Br À ).…”

“…Their great merits such as high carrier mobility, high absorption coefficient, low carrier recombination rate, low exciton binding energy, high defect tolerance, and tunable band-gap properties enabled an outstanding performance within a decade. 3–6 The certified power conversion efficiency (PCE) has been pushed to 25.7% with superior long-term operational stability. 7…”