Highly textured (100)-oriented AlN thin films using thermal atomic layer deposition and their electrical properties

Tiwari, Chandni; Dixit, Ambesh

doi:10.1007/s00339-021-04961-4

Cited by 4 publications

(2 citation statements)

References 34 publications

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“…Obtaining crystalline phase of InSe is of interest due to the need for using the material in many optoelectronic applications including multi-level storage that can be achieved via phase-change memory cells [8] Crystalline phases of materials are preferred under conditions where high mobility and low resistivity applications are needed [10]. One fast method for achieving crystallinity in materials is the pulsed laser technique [11].…”

Section: Introductionmentioning

confidence: 99%

Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Khusayfan,

Qasrawi,

Khanfar

et al. 2024

Phys. Scr.

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In the current study the crystalline phase of indium selenide thin films which were grown by the thermal evaporation technique is achieved via pulsed laser welding technique (PLW) in a second. The films crystallinity is achieved under various welding conditions including the pulse width (PW), repetition frequency (f_r ) and pulse diameter (d). The optimum parameters for obtaining well crystalline phase are PW=1.0 ms, f_r=10Hz and d=1.0 mm. PLW induced crystallinity showed preferred structure relating to monoclinic phase of InSe. Compositionally while amorphous films exhibited In2Se3 chemical structure, crystalline ones preferred InSe phase. Associated with this type of crystallinity, direct and indirect energy band gap values of 2.32 eV and 3.12 eV are determined. The crystalline films showed lower dielectric constant value accompanied with higher optical conductivity and higher terahertz cutoff frequency in the infrared range of light. In addition the dielectric dispersion spectra were treated using Drude-Lorentz model to read the optical conductivity parameters for the PLW assisted crystalline InSe terahertz resonators. The treatment showed that the crystallinity of the films resulted in improved free carrier density, longer relaxation times at femtosecond level, larger plasmon frequencies and higher drift mobility values. These features together with the response of terahertz cutoff frequency to IR excitations make crystalline InSe thin films promising for optoelectronic and terahertz technology applications.

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Section: Introductionmentioning

confidence: 99%

Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Khusayfan,

Qasrawi,

Khanfar

et al. 2024

Phys. Scr.

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“…Alternative nitrogen precursors are forming gas (N 2 + H 2 ), ,− hydrazine (N 2 H 4 ), − hydrazinium chloride (N 2 H 5 Cl), and monomethyl hydrazine (N 2 CH 6 ) . Alternative metal precursors are AlCl 3 , ,− TEA, , TMAA, , TDMAA, ,− DMEAA, − TDEAA, TiBA, and DMAA . Additionally, metal precursors are being developed tailored to the ALD of AlN .…”

Section: Introductionmentioning

confidence: 99%

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride

van der Wel,

van der Zouw,

Aarnink

et al. 2023

J. Phys. Chem. C

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This work demonstrates intrinsic area-selective deposition of AlN films by thermal atomic layer deposition (ALD). Using sequential pulses of trimethylaluminum and NH 3 at a substrate temperature of 623 K, polycrystalline AlN was selectively formed on a thin layer of sputtered AlN that was patterned on thermal SiO 2 grown on Si substrates. A pretreatment to remove native AlO x N y facilitated the selective growth of ALD-AlN. Transmission electron microscopy, X-ray photoelectron spectroscopy, spectroscopic ellipsometry, and atomic force microscopy examined the interfaces and layer thickness. As reported in this article, the deposition of AlN exhibits intrinsic selectivity, a trait that can be exploited to grow other III-nitrides selectively, such as GaN.

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Finite element simulation of Rayleigh surface acoustic wave in (100) AlN/(100) ZnO/diamond layered structure

Zhang,

Qian,

Qian

et al. 2023

Optoelectron. Lett.

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Highly textured (100)-oriented AlN thin films using thermal atomic layer deposition and their electrical properties

Cited by 4 publications

References 34 publications

Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Fast crystallization of InSe thin films via pulsed laser welding technique and effect of crystallinity on the optical and dielectric properties

Area-Selective Low-Pressure Thermal Atomic Layer Deposition of Aluminum Nitride

Finite element simulation of Rayleigh surface acoustic wave in (100) AlN/(100) ZnO/diamond layered structure

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