Highly transparent and conducting Al-doped ZnO as a promising material for optoelectronic applications

Raj, Rishabh; Gupta, Himanshu; Purohit, L.P.

doi:10.1007/s12043-021-02123-y

Cited by 10 publications

(7 citation statements)

References 38 publications

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“…Table 1 summarizes the photoelectric response of ZnO-based UV devices prepared by different methods. Compared with other AZO UV devices previously reported [18,20,[42][43][44], the Au/AZO/p-Si diode prepared by radio frequency magnetron sputtering in this work shows excellent photoelectric performance as a whole.…”

Section: Resultsmentioning

confidence: 71%

Photoelectric characteristics of Al-doped ZnO/p-Si diode prepared by radio frequency magnetron sputtering

Lu¹,

Guo²,

Su³

et al. 2022

J. Phys. D: Appl. Phys.

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Al-doped ZnO (AZO) thin films were deposited on p-type silicon (p-Si) substrates by radio frequency magnetron sputtering technology. The crystal structure, morphology characterization and elemental analysis show that AZO film grows along the c-axis (002) orientation without other impurities. The current-voltage and current-time characteristics under different illumination conditions demonstrate that the Au/AZO/p-Si diode has typical rectification behavior, excellent stability and repeatability. The photocurrent is proportional to the intensity of ultraviolet irradiation, and the photocurrent reaches 110 μA at a bias voltage of 5 V under 11.75 mW/cm2 ultraviolet light irradiation. By calculating the conduction band and valence band offset values of AZO/p-Si heterojunction, the energy band diagrams at different bias states are constructed to explain the photoelectric response behavior. These results will be helpful for the design of high-performance photodiodes.

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Section: Resultsmentioning

confidence: 71%

Photoelectric characteristics of Al-doped ZnO/p-Si diode prepared by radio frequency magnetron sputtering

Lu¹,

Guo²,

Su³

et al. 2022

J. Phys. D: Appl. Phys.

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“…For photon energy below bandgap, the transmittances of all nanomembranes are remarkable (88%-95%), and the value increases with the Al content. It is worth noting that in previous literature, AZO prepared by other approaches like sol-gel method demonstrates decreased transmittance with increased Al content [32]. This difference may be attributed to the inhomogeneous doping: if Al dopant concentration is substantial in AZO nanomembrane prepared by sol-gel method, clusters of Al could induce considerable random scattering of light [43].…”

Section: Resultsmentioning

confidence: 92%

“…Figure 1(a) presents the scanning electron microscopy (SEM) images of AZO nanomembranes deposited via ALD with varied Al contents (i.e. 9:1, 19:1, 29:1 and pure ZnO), at a temperature of 200 • C. These AZO nanomembranes, differing from their inhomogeneous, wrinkled and cracked configurations fabricated through sol-gel method as detailed in literature [32], display uniform, dense and voidless morphology. The morphologies of these AZO nanomembranes do not undergo significant alteration with respect to the Al 2 O 3 content, proving the layer-by-layer formation of the ALD technology.…”

Section: Resultsmentioning

confidence: 99%

Atomic layer deposition of Al-doped ZnO nanomembrane with in situ monitoring

Wang,

Gu,

Zhao

et al. 2024

Nanotechnology

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Due to shortcomings such as poor homogeneity of Al doping, precisely controlling the thickness, inability to conformally deposit on high aspect ratio devices and high pinhole rate, the applications of Al-doped ZnO (AZO) nanomembrane in integrated optoelectronic devices are remarkably influenced. Here, we report in situ monitoring during the atomic layer deposition (ALD) of AZO nanomembrane by using an integrated spectroscopic ellipsometer. AZO nanomembranes with different compositions were deposited with real-time and precise atomic level monitoring of the deposition process. We specifically investigate the half reaction and thickness evolution during the ALD processes and the influence of the chamber temperature is also disclosed. Structural characterizations demonstrate that the obtained AZO nanomembranes without any post-treatment are uniform, dense and pinhole-free. The transmittances of the nanomembranes in visible range are > 94%, and the optimal conductivity can reach up to 1210 S/cm. The output of current research may pave the way for AZO nanomembrane becoming promising in integrated optoelectronic devices.

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“…[24] Sol-gel synthesis is one of these grown depositions' thin-film techniques that have the advantages of low deposition temperature and costeffective deposition. [25,26] Many works have described AZO sol-gel deposited on glass substrates [27][28][29][30] [ [1][2][3][4], ITO [31] [5], and FTO, [32] but few works have described Al-doped ZnO sol-gel deposited on silicon substrates by spin coating. However, special attention has been paid to the moderate Al contents.…”

Section: Introductionmentioning

confidence: 99%