Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots

Riikonen, Juha; Sormunen, Jaakko; Koskenvaara, H.; Mattila, Marco; Sopanen, Markku; Lipsanen, Harri

doi:10.1143/jjap.44.l976

Cited by 2 publications

(4 citation statements)

References 13 publications

(18 reference statements)

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“…Strain-induced quantum dots have so far been fabricated on, e.g. GaAs [4,[15][16][17], InP [18][19][20] and Si [21] substrates. The models and results for InP/GaAs/InGaAs SIQD, reviewed in this work, can also guide the analysis and understanding of other types of SIQD.…”

Section: The Strain and The Confinement Of Carriersmentioning

confidence: 99%

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

Boxberg

Tulkki

2007

Rep. Prog. Phys.

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Strain-induced quantum dots (SIQD) confine electrons and holes to a lateral potential minimum within a near-surface quantum well (QW). The potential minimum is located in the QW below a nanometre-sized stressor crystal grown on top of the QW. SIQD exhibit well-resolved and prominently atomic-like optical spectra, making them ideal for experimental and theoretical studies of mesoscopic phenomena in semiconductor nanocrystals.In this report we review the theory of strain-induced confinement, electronic structure, photonics and carrier relaxation dynamics in SIQD. The theoretical results are compared with available experimental data. Electronic structure calculations are mainly performed using the multiband envelope function approach. Many-body effects are discussed using a direct diagonalization method, albeit, for the sake of computational feasibility, within a two-band model.The QD carrier dynamics are discussed in terms of a master equation model, which accounts for the details of the electronic structure as well as the leading photon, phonon and Coulomb interaction processes. We also discuss the quantum confined Stark effect, the Zeeman splitting and the formation of Landau levels in external fields. Finally, we review a recent theory of the cooling of radiative QD excitons by THz radiation. In particular we discuss the resonance charge transfer of holes between piezoelectric trap states and the deformation potential minima. The agreement between the theory and experiment is fair throughout, but calls for further investigations.

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Section: The Strain and The Confinement Of Carriersmentioning

confidence: 99%

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

Boxberg

Tulkki

2007

Rep. Prog. Phys.

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“…The PL redshift (46-64 meV) of the QD0 transition from the QW peak, shown in (b), follows the depth of the confinement potential. Calculations have indicated that 80-90% of the redshift originates from the conduction band [11] (figure 1(d)). Thus, in the InGaAsP/InP QDs studied in this work, the QW ground state for an electron is ∼50 meV higher than the QD ground states.…”

Section: Resultsmentioning

confidence: 99%

“…Recently, a highly tunable InGaAsP/InP SIQD structure utilizing InAs islands has also been reported [11,12]. The lattice mismatch of the InAs/InP stressors (3.2%) is roughly the same as in the case of the InP/GaAs stressor system.…”

Section: Introductionmentioning

confidence: 98%

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Effect of surface states on carrier dynamics in InGaAsP/InP stressor quantum dots

Riikonen¹,

Sormunen²,

Koskenvaara³

et al. 2006

Nanotechnology

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The carrier dynamics in strain-induced InGaAsP/InP quantum dots (QDs) is investigated by time-resolved photoluminescence and continuous-wave photoluminescence. The stressor QDs are fabricated by depositing self-assembled InAs islands (or stressor islands) on top of a near-surface InGaAsP/InP quantum well (QW). The temporal behaviour of the QD photoluminescence transients are observed to exhibit a two-phase decay. Rate equation analyses reveal that by increasing the distance of the QW from the surface the surface capture time constant is increased considerably while the capture time constant of an electron from the QW to the QD is decreased.

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Highly Tunable Emission from Strain-Induced InGaAsP/InP Quantum Dots

Cited by 2 publications

References 13 publications

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

Theory of the electronic structure and carrier dynamics of strain-induced (Ga, In)As quantum dots

Effect of surface states on carrier dynamics in InGaAsP/InP stressor quantum dots

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