Historical perspective on the discovery of porous silicon

Uhlir, A.; Uhlir, Ingeborg

doi:10.1002/pssc.200461100

Cited by 19 publications

(7 citation statements)

References 8 publications

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“…Ingeborg Uhlir first discovered and reported the formation of porous silicon films by electrochemical etching in 1956 [92] . Silicon‐based nanopores can be obtained by directly irradiating focused ions or electron beams on silicon dioxide (SiO 2 ) or silicon nitride (SiN x ) films [93] .…”

Section: Nanoporementioning

confidence: 99%

“…Ingeborg Uhlir first discovered and reported the formation of porous silicon films by electrochemical etching in 1956. [92] Silicon-based nanopores can be obtained by directly irradiating focused ions or electron beams on silicon dioxide (SiO 2 ) or silicon nitride (SiN x ) films. [93] One specific method of fabrication is first to remove the SiO 2 , or SiN x , covering the top and bottom surfaces of the silicon wafer and then deeply etch the exposed silicon surface with KOH.…”

Section: Silicon-based Nanoporesmentioning

confidence: 99%

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Recent Advances in Aptamer‐Based Nanopore Sensing at Single‐Molecule Resolution

Zhang

Yang

et al. 2022

Chemistry An Asian Journal

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Aptamers as the recognition element of the stochastic nanopore sensors have been under intense investigation. This paper reviews recent research advances in aptamer‐based nanopore sensing techniques, including the classification and selection of nanopores (biological nanopores, solid‐state nanopores, and nanopipettes), different strategies of aptamer‐based nanopore sensing, and their values and outlook for applications in areas such as environmental analysis, precision diagnosis, pharmaceutical industry, and security. Furthermore, the single‐molecule nanopore sensors have been applied to reveal the aptamer‐target interactions, such as recognition orientation, binding sites, and conformational heterogeneity dissociation kinetics at the single‐molecule level. In this review, recent research efforts to develop aptamer‐based single‐molecule nanopore sensors with high selectivity and sensitivity are highlighted, and some perspectives are drawn.

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Section: Nanoporementioning

confidence: 99%

Section: Silicon-based Nanoporesmentioning

confidence: 99%

Recent Advances in Aptamer‐Based Nanopore Sensing at Single‐Molecule Resolution

Zhang

Yang

et al. 2022

Chemistry An Asian Journal

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“…Porous silicon (PSi) was first discovered in 1956 by researchers at Bell Laboratories interested in electropolishing of c-Si surface [132]. In the late 1980s, PSi was rediscovered as a nanostructured material by Canham [133] and Lehmann and G€ osele [134]; they suggested that PSi exhibits quantum confinement effect due to reduced dimensions of Si crystallites.…”

Section: Electrochemically Etched Si (Porous Si)mentioning

confidence: 99%

Thermal Properties and Heat Transport in Silicon‐Based Nanostructures

Chang

Tsybeskov

2010

Silicon Nanocrystals

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IntroductionFor the past 40 years, crystalline Si (c-Si) continues to be the major material for microelectronics, and modern silicon technology is superior compared to other semiconductors (e.g., II-VI and III-V compounds). In addition to the unique electronic and structural properties of bulk c-Si, silicon dioxide (SiO 2 ) and Si/SiO 2 interfaces, single-crystal Si possesses one of the best known lattice thermal conductivity [1,2]. This exceptional heat conductance is critically important for Si device heat management and circuit reliability. However, most of the modern complementary metal-oxide-semiconductor (CMOS) platforms are no longer single-crystal Si wafers but rather thin layers of Si-on-insulator (SOI), ultrathin strained Si and SiGe heterostructures that are the foundation of SiGe bipolar transistors (HBTs), and high-mobility metal-oxide-semiconductor field-effective transistors (MOSFETs). Major properties of these Si-based nanostructures are very different from those of bulk c-Si. For example, thermal conductivity in ultrathin SOI layers, SiGe alloys, and Si/SiGe nanostructures could be reduced by more than an order of magnitude compared to that in c-Si [3-6], and heat dissipation has become an important issue for modern nanoscale electronic devices and circuits. Thus, the understanding and improvement of heat management in Si-based nanostructures is critically important for the evolution of microelectronic industry.On the other hand, many interesting applications of nanostructured Si (ns-Si) in photonic devices and CMOS-compatible light emitters were recently discussed [7][8][9][10][11]. These ns-Si materials and devices can be produced by electrochemical anodization (i.e., porous Si [12]), chemical vapor deposition (CVD) using thermal decomposition of SiH 4 [13-15], Si ion implantation into a SiO 2 matrix [16], and deposition of amorphous Si/SiO 2 layers followed by thermal crystallization [17][18][19]. These ns-Si materials and devices produce an efficient and tunable light emission in the near-infrared and visible spectral region [20,21]. Also, it has been shown that under photoexcitation with energy density >10 mJ/cm 2 , optical gain is possibly Silicon Nanocrystals: Fundamentals, Synthesis and Applications. Edited by Lorenzo Pavesi and Rasit Turan

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“…They used an electrolyte containing hydrofluoric acid, which left a spongelike nanocrystalline silicon structure on the wafer. 1 This roughened, chemically reactive surface makes the material a versatile substrate for biosensors.…”

mentioning

confidence: 99%