“…The use of FEAs in MVEDs has been proposed and implemented for microtriodes [5,96,97], klystrodes [6,32,96,97], twystrodes [96], gyrotrons [20], magnetrons [12,28,29,98], and TWTs [8,9,99,100]. The use of GFEAs in gated emission devices such as the microtriode, klystrode, and twystrode is very appealing due to the low transconductance (the ratio of the change in current at the output terminal to the change in the voltage at the input terminal of an active device), short transit times (the time for an electron to travel from the emitter to the gate), and the small package.…”