10th IEEE International Conference of Advanced Thermal Processing of Semiconductors
DOI: 10.1109/rtp.2002.1039463
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History of semiconductors diffusion engineering

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Cited by 7 publications
(6 citation statements)
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“…Thus, the standard explanation for oil firms' computing ventures is that they were "part of a diversification effort" (as Bo Lojek dismissively described Schlumberger's 1979 purchase of Fairchild). 100 Yet just because a business appears (especially retrospectively) unrelated to oil production does not mean that an oil company invested in it solely to diversify its portfolio. And even where diversification strategies were at work, we have to ask why oil companies diversified in some directions and not others.…”
Section: Spillovers Beyond Moneymentioning
confidence: 99%
“…Thus, the standard explanation for oil firms' computing ventures is that they were "part of a diversification effort" (as Bo Lojek dismissively described Schlumberger's 1979 purchase of Fairchild). 100 Yet just because a business appears (especially retrospectively) unrelated to oil production does not mean that an oil company invested in it solely to diversify its portfolio. And even where diversification strategies were at work, we have to ask why oil companies diversified in some directions and not others.…”
Section: Spillovers Beyond Moneymentioning
confidence: 99%
“…For many generations, it was possible to continue increasing device density by reducing processing temperatures that reduced diffusion; however, chemical doping needed to be replaced below features of 2 mm. Early in the development of semiconductor technology, ion implantation was identified as a potential method for doping and forming junctions [32,33]; however, it was not until later that ion implantation was used to introduce dopants into lightly doped regions of devices and eventually into the heavily doped regions of devices [34][35][36][37]. In many cases, the photoresist was used to block implantation of ions into undesired regions.…”
Section: (D) Dopant Processing Maskingmentioning
confidence: 99%
“…The technique provided a controlled means to produce the necessary n-and p-type regions within semiconducting devices. Just two years later in 1957, Jay Lathrop and James Nall, both working at the U.S. Army's Diamond Ordnance Fuse Laboratories, successfully patterned metallic strips with a width of 200 µm as interconnects between Ge-based transistors [2]. Lathrop and Nall used the term "photolithography" to describe their process.…”
Section: Introductionmentioning
confidence: 99%