History, status and prospects of producing silicon sensors for HEP experiments at Infineon Technologies

Abstract

Within this project we are developing single-sided AC-coupled silicon strip sensors and DC-coupled hexagonal pad sensors for applications in High Energy Physics (HEP) experiments. The project started with a feasibility study to re-produce the state-of-the art of silicon sensors of that time, which were based on high-resistivity n-type float-zone 6-inch silicon wafers. Later, the first silicon strip sensors on 8-inch p-type wafers were produced within this project. This influenced the decision of another project to build a silicon sensor based sampling calorimeter. This paper presents the history, current status, and prospects of this sensor development project, jointly conducted by the

Test beam performance of a CBC3-based mini-module for the Phase-2 CMS Outer Tracker before and after neutron irradiation

“…The two identical AC coupled strip sensors are made from high resistive float zone silicon, thinned to a physical and active thickness of 300 μm. The 254 strips per sensor use polysilicon bias resistors and p-stop strip isolation and are approximately 5 cm long with a pitch of 90 μm and a width-to-pitch ratio of 0.25 [10]. The strip geometry is close to the final 2S sensors and therefore also the capacitance seen by the readout chip.…”

Test beam performance of a CBC3-based mini-module for the Phase-2 CMS Outer Tracker before and after neutron irradiation

“…The two identical AC coupled strip sensors are made from high resistive float zone silicon, thinned to a physical and active thickness of 300 𝜇m. The 254 strips per sensor use polysilicon bias resistors and p-stop strip isolation and are approximately 5 cm long with a pitch of 90 𝜇m and a width-to-pitch ratio of 0.25 [10]. The strip geometry is close to the final 2S sensors and therefore also the capacitance seen by the readout chip.…”

200 mm sensor development using bonded wafers

“…Modern technologies such as 3-D integration often can only be affordably implemented on larger wafers. These needs motivate the development of technologies to move sensor wafer fabrication from 6" to 8" wafers [4].…”