Hole burning spectroscopy of tetraphenylporphyrins

Irradiation of the monomeric phthalocyanine Hex$iO( SiPc)OSiHex3 isolated in an Ar matrix at T= 13 Kwith the 632.8 nm line of a He/Ne laser produces a resonant spectral hole in the vibrational sideband located about 700 cm-' above the origin of the Q band. This hole is accompanied by several sideholes in the origin region. These permit a precise determination of several excited-state vibrational frequencies. For dimeric HexrSiO( SiPc-0-SiPc)OSiHexr in the same matrix the changes in the absorption spectra after irradiation into the Q band reveal an out-of-plane polarization of the bands which are not present in the monomer absorption. This points to substantial charge-resonance contributions to the excitonic coupling between the two SiPc units in dimeric Hex$iO ( SiPc-0-SiPc)OSiHexJ.

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Spectral hole burning on silicon phthalocyanines isolated in an argon matrix

Braun

Ceulemans

Dick

et al. 1994

Chemical Physics Letters

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Hole burning spectroscopy of tetraphenylporphyrins

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Spectral hole burning on silicon phthalocyanines isolated in an argon matrix

Spectral hole burning on silicon phthalocyanines isolated in an argon matrix

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