Hole capture in boron-doped diamond

Glesener, J. W.

doi:10.1063/1.111509

Cited by 26 publications

(12 citation statements)

References 12 publications

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“…27 The conduction mechanism drastically changes at N c1 =4ϫ 10 18 cm −3 ͑N B = 1000 ppm͒, hence the average distance between borons at N c1 is estimated using r c1 = ͑4N c1 / 3͒ ͑−1/3͒ , and r c1 Ϸ 4 nm is obtained. This value is close to that of the reported cross section of the 2p wave function ͑3.7 nm͒, 25 suggesting that the 2p wave function starts to overlap with that of the neighboring boron atoms at N c1 .…”

Section: Discussionsupporting

confidence: 83%

“…Glesener 25 presented a carrier capture model on the basis of deep level transient spectroscopy and said that when a carrier in the valence band is captured by an impurity, it occupies the highest excited states of the acceptor and then quickly tunnels to the lowest excited level. At the lowest excited level ͑E T = 82 meV͒, the trapped hole is either thermalized back to the valence band or falls down to the ground states via a slow multiphonon decay.…”

Section: Resultsmentioning

confidence: 99%

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Impurity band structure of boron-doped homoepitaxial diamond

2009

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Impurity band structure of boron-doped diamond is investigated using p + / p − / p + mesa structures with thin p − layers, where p + is heavily doped diamond with variable range hopping conductivity and p − is less-doped diamond with valence-band conductivity. From the frequency and temperature dependence of the conductivity of the mesa structures, it is found that holes injected into the p − layer stay at the 2p states of boron for an extremely long time and contribute to the conductivity. From the equivalent circuit analysis it is concluded that, when the boron concentration exceeds ϳ4 ϫ 10 18 cm −3 , the 2p wave functions of boron begin to overlap, and an impurity band forms at 2p states, which is located ϳ0.07 eV above the valence-band maximum. Simultaneously, the Fermi level rises to the impurity band by a strong electron-optical phonon interaction and a variable range hopping is realized in this band.

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Section: Discussionsupporting

confidence: 83%

Section: Resultsmentioning

confidence: 99%

Impurity band structure of boron-doped homoepitaxial diamond

2009

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“…Indeed, the metallic properties of heavily B-doped diamond are now the subject of an intense theoretical investigation. If many authors suggest that B-doped diamond in the doping regime above ∼ 0.5% should be a degenerate metal [4,5], with a conduction band strongly broadened by disorder, others point out that the deep 0.37 eV level of the isolated Bacceptor [6] may prevent the merging of the B-like bands with the C valence band, and propose unconventional models for the metallization of diamond [7]. One thus may wonder whether diamond is anyhow a BCS material, eventually with a high degree of disorder, or an exotic superconductor like most of those discovered in the last two decades.…”

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confidence: 99%

Low-Energy Electrodynamics of Superconducting Diamond

Ortolani

Lupi²,

Baldassarre³

et al. 2006

Phys. Rev. Lett.

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Boron-doped diamond films can become superconducting with critical temperatures Tc well above 4 K. Here we first measure the reflectivity of such a film down to 5 cm −1 , by also using Coherent Synchrotron Radiation. We thus determine the optical gap 2∆, the field penetration depth λ, the range of action of the Ferrell-Glover-Tinkham sum rule, and the electron-phonon spectral function α 2 F (ω). We conclude that diamond behaves as a "dirty" BCS superconductor.PACS numbers: 74.78. Db, Diamond, with its extraordinary mechanical properties, excellent thermal conductivity, and large gap between the valence and the conduction band, is potentially a semiconductor more attractive than silicon for many applications. Therefore the transport properties of diamond films, deposited by Chemical Vapor Deposition (CVD), and doped by acceptors or donors, are being extensively explored in view of a possible, future diamondbased electronics. In this framework it has been discovered recently that heavily boron-doped diamond can also become a superconductor [1] below critical temperatures T c well above the liquid helium temperature [2], if the doping level is 2.5%.Strongly covalent bonds, high concentration of impurities, and high phonon frequencies make B-doped diamond much different from the conventional metals where the Bardeen-Cooper-Schrieffer (BCS) [3] theory of superconductivity holds. Indeed, the metallic properties of heavily B-doped diamond are now the subject of an intense theoretical investigation. If many authors suggest that B-doped diamond in the doping regime above ∼ 0.5% should be a degenerate metal [4,5], with a conduction band strongly broadened by disorder, others point out that the deep 0.37 eV level of the isolated Bacceptor [6] may prevent the merging of the B-like bands with the C valence band, and propose unconventional models for the metallization of diamond [7]. One thus may wonder whether diamond is anyhow a BCS material, eventually with a high degree of disorder, or an exotic superconductor like most of those discovered in the last two decades. The study of the electron-phonon interaction in metallic diamond, a likely candidate for the Cooper pairing mechanism, has also attracted considerable attention, since the high phonon frequencies make the adiabatic limit questionable and the covalent bonds may produce a very strong coupling costant, like in MgB 2 [8, 9]. Here we approach both this problems by first measuring the reflectivity of a superconducting diamond film, in the sub-Terahertz region down to 5 cm −1 where the gaps of superconductors are observed, and in the infrared region, where the signatures of the electron-phonon coupling appear. The sub-Terahertz frequencies have been reached, with the required signal-to-noise ratio, by use of Coherent Synchrotron Radiation.A basic feature of the superconducting state is the opening, for T < T c , of a gap E g in the electronic density of states. Correspondingly, if the Cooper pairs are in a spherically symmetric s state, the reflectivity becomes R s (ω)...

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“…These traps are shallow as indicated by the ionization energy level which is limited by the frequency of the CV meter. For these calculations a capture cross section of 4 10 -13 cm 2 was used, [9] though little error arises from variations in this number. Also, we used 2.…”

Section: Discussionmentioning

confidence: 99%

Charge Trapping Analysis of High Speed Diamond FETs

et al. 2017

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Charge carrier trapping in diamond surface conduction field effect transistors (FETs) has been analyzed. For these devices two methods were used to obtain a negative electron affinity diamond surface; either plasma hydrogenation or annealing in an H2 environment. In both cases the Al2O3 gate dielectric can trap both electrons and holes in deep energy levels with emission timescales of seconds, while the diamond -Al2O3 interface traps exhibit much shorter time scales in the microsecond range. Capacitance-Voltage (CV) analysis indicates that these interface traps exhibit acceptor-like characteristics. Correlation with CV based free hole density measurements indicates that the conductance based interface trap analysis provides a method to quantify surface characteristics that lead to surface conduction in hydrogenated diamond where atmospheric adsorbates provide the acceptor states for transfer doping of the surface.

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Hole capture in boron-doped diamond

Cited by 26 publications

References 12 publications

Impurity band structure of boron-doped homoepitaxial diamond

Impurity band structure of boron-doped homoepitaxial diamond

Low-Energy Electrodynamics of Superconducting Diamond

Charge Trapping Analysis of High Speed Diamond FETs

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