Hole Compensation Mechanism of P-Type GaN Films

Nakamura, Shuji; Iwasa, Naruhito; Senoh, Masayuki; Mukai, Takashi

doi:10.1143/jjap.31.1258

Cited by 1,027 publications

(544 citation statements)

References 27 publications

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“…8 The predicted frequencies are 3100 cm -1 for V Ga -H and 3470 cm -1 for V Ga -H 4 and are close to the vibrational frequencies we have measured. Van de Walle also predicted a frequency of 600 cm -1 for the V N -H complex, 8 much lower than the vibrational frequencies we have seen.…”

Section: Vibrational Spectroscopysupporting

confidence: 83%

“…[1][2][3] These successes have depended, in part, on an improved understanding and control of defect processes such as the hydrogen passivation of acceptors in the nitrides. [4][5][6][7] Of particular interest here are recent studies of the interaction of hydrogen with native defects 8 and experimental results for the defects introduced in GaN by high-energy electron irradiation. 9,10 In this paper we report results for the defects introduced by the implantation of hydrogen into GaN.…”

Section: Introductionmentioning

confidence: 99%

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Spectroscopy of Proton Implanted GaN

Weinstein

Stavola

Song

et al. 1999

MRS Internet j. nitride semicond. res.

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Vibrational spectroscopy, photoluminescence, and optically detected electron paramagnetic resonance (ODEPR) have been used to characterize the defects produced in undoped and Sidoped GaN by the implantation of hydrogen. Several new vibrational bands were found near 3100 cm -1 in GaN that had been implanted with protons. These frequencies are close to those predicted for V Ga -H n complexes, leading to the tentative assignment of the new lines to V Ga defects decorated with different numbers of H atoms. The proton implantation also produces an infrared PL band centered at 0.95 eV and the ODEPR spectrum labeled LE1, both of which were seen previously for electron-irradiated GaN.

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Section: Vibrational Spectroscopysupporting

confidence: 83%

Section: Introductionmentioning

confidence: 99%

Spectroscopy of Proton Implanted GaN

Weinstein

Stavola

Song

et al. 1999

MRS Internet j. nitride semicond. res.

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show abstract

“…In real experiments, the H2 pressure may be higher because of the unavoidable passivation of bulk or interface defects. The extra incorporation of H can be thermally annealed later [61] . Therefore, our results give a lower limit of H2 pressure.…”

Section: Table IImentioning

confidence: 99%

“…(1) it is more flexible to passivate different surfaces of various materials and satisfy ECR; (2) those hydrogen atoms diffused into bulk may passivate dangling bonds in the bulk or on the interfaces and improve the crystal quality by suppressing the formation of certain deep defects [49,59,60]; (3) H can be easily driven out by post-annealing treatment [61].…”

Section: Introductionmentioning

confidence: 99%

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

Zhang

Tse

et al. 2018

Phys. Rev. Materials

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Heterostructures of wurtzite based devices have attracted great research interests since the tremendous success of GaN in light emitting diodes (LED) industry. Among the possible heterostructure material candidates, high quality GaN thin films on inexpensive and lattice matched ZnO substrate are both commercially and technologically desirable. However, the energy of ZnO polar surfaces is much lower than that of GaN polar surfaces. Therefore, the intrinsic wetting condition forbids such heterostructures.As a result, poor crystal quality and 3D growth mode were obtained. To dramatically change the growth mode of the heterostructure, we propose to use hydrogen as a surfactant, confirmed by our first principles calculations. Stable H involved surface configurations and interfaces are investigated, with the help of newly developed algorithms. By applying the experimental Gibbs free energy of H2, we also predict the temperature and chemical potential of H, which is critical in experimental realizations of our strategy. This novel approach will for the first time make the growth of high quality GaN thin films on ZnO substrates possible. We believe that our new strategy may reduce the manufactory cost and improve the crystal quality and the efficiency of GaN based devices.

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“…Especially the studies of hydrogen in metal oxides have been reported for various applications, [1][2][3][4][5] but hydrogen in metal nitrides has not been studied so much. As well as hydrogen in metal oxides, hydrogen in metal nitrides is very important when high quality p-type GaN thin films were prepared because hydrogen in p-type GaN plays a role of passivator against acceptor Mg. 6) Therefore it is so valuable to make the relationship clear between hydrogen and defects or impurities in the metal nitride thin films.…”

Section: Introductionmentioning

confidence: 99%

Hydrogen Implantation Effects on the Electrical and Optical Properties of Metal Nitride Thin Films

2002

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Copper and Aluminum Nitride thin films were prepared by the reactive R. F. sputtering method with controlling the N 2 gas content. Their electrical resistivity and optical bandgap energy were varied as the content of N 2 gas during the deposition. For example, the electrical resistivity of the copper nitride thin films increased from 10 −1 to 10 1 m as the nitride approaches to the stoichometric Cu 3 N. To modify the electrical and the optical properties of the nitride thin films, hydrogen was introduced by low energy ion implantation. The electrical resistivity of nearly stoichiometric Cu 3 N thin films decreased from 10 1 to 10 −4 m after hydrogen ion implantation for 30 minutes because this treatment at even 3 keV formed many irradiation defects near the surface of the Cu 3 N thin films. On the other hand, the electrical and the optical properties of insulating AlN thin films were hardly modified with the 7 h implantation. But the electrical resistivity and the optical bandgap energy of the Al rich Al-N thin films could be increased by the hydrogen ion implantation.

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Hole Compensation Mechanism of P-Type GaN Films

Cited by 1,027 publications

References 27 publications

Spectroscopy of Proton Implanted GaN

Spectroscopy of Proton Implanted GaN

Hydrogen-surfactant-assisted coherent growth of GaN on ZnO substrate

Hydrogen Implantation Effects on the Electrical and Optical Properties of Metal Nitride Thin Films

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