2021
DOI: 10.1039/d1cp01071a
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Hole doping and chemical pressure effects on the strong coupling superconductor PdTe

Abstract: Chemical doping of known superconductors is a probate strategy to test and enhance our understanding which parameters control the critical temperature Tc and magnetic fields. The transition metal chalcogenide PdTe...

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Cited by 2 publications
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“…The gate voltage response within the ±40 V range was absent due to the high carrier density in superconducting Pd x Te. The superconducting transition temperature in this device is around 4 K. Note that pure Pd is not superconducting above 2 mK, while the Pd x Te compound is a superconductor with transition temperature depending on the chemical composition x (1.8 K for x = 0.5 and 4.5 K for x = 1). , Additionally, the transition temperature can be tuned by controlling the diffusion of Pd atoms, which we discuss in the following section. A similar interdiffusion process is observed in Al and Ge–Si systems after thermal treatments …”
Section: Resultsmentioning
confidence: 96%
“…The gate voltage response within the ±40 V range was absent due to the high carrier density in superconducting Pd x Te. The superconducting transition temperature in this device is around 4 K. Note that pure Pd is not superconducting above 2 mK, while the Pd x Te compound is a superconductor with transition temperature depending on the chemical composition x (1.8 K for x = 0.5 and 4.5 K for x = 1). , Additionally, the transition temperature can be tuned by controlling the diffusion of Pd atoms, which we discuss in the following section. A similar interdiffusion process is observed in Al and Ge–Si systems after thermal treatments …”
Section: Resultsmentioning
confidence: 96%