Hole-hole interaction in a strained<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>In</mml:mi><mml:mi>x</mml:mi></mml:msub><mml:msub><mml:mi>Ga</mml:mi><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub><mml:mi>As</mml:mi></mml:mrow></mml:math>two-dimensional system

Minkov, G. M.; Шерстобитов, А. А.; Германенко, А. В.; Рут, О. Э.; Larionova, Viola; Звонков, Б. Н.

doi:10.1103/physrevb.72.165325

Cited by 26 publications

(32 citation statements)

References 23 publications

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“…The occupation of a second subband or anisotropic scattering could modify the proportionality constant between ω and β 3 . The temporal precession observed should hold universally for cubic SOI, e.g., also in hole gases in group IV [32] and III-V semiconductors [4,[33][34][35][36], or charge layers in oxides like perovskites [37]. Moreover, the effect demonstrated must be considered when designing spintronic devices based on such systems.…”

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confidence: 99%

Current-Controlled Spin Precession of Quasistationary Electrons in a Cubic Spin-Orbit Field

et al. 2016

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Space-and time-resolved measurements of spin drift and diffusion are performed on a GaAs-hosted two-dimensional electron gas. For spins where forward drift is compensated by backward diffusion, we find a precession frequency in absence of an external magnetic field. The frequency depends linearly on the drift velocity and is explained by the cubic Dresselhaus spin-orbit interaction, for which drift leads to a spin precession angle twice that of spins that diffuse the same distance.Drift and diffusion of charge carriers in semiconductor nanostructures are the foundation of information technology. The spin of the electron is being investigated as an additional or complementary degree of freedom that can enhance the functionality of electronic devices and circuits [1][2][3]. In the presence of spin-orbit interaction (SOI), the spins of moving electrons precess about effective magnetic fields that depend on the electron momentum vector, k [4]. In a two-dimensional electron gas (2DEG), this precession has been proposed as a gatetunable switching mechanism [5,6]. Spin diffusion and spin drift have been studied using optical [7][8][9][10][11] and electrical techniques [12,13]. A local spin polarization expands diffusively into a spin mode with a spatial polarization pattern that is characteristic of the strength and symmetry of the SOI [14]. An additional drift induced by an electric field does not modify the spatial precession period in the case of linear SOI [15][16][17][18]. This is because spins that travel a certain distance and direction precess on average by the same angle, irrespective of how the travel is distributed between diffusion and drift. Therefore, no spin precession occurs for quasi-stationary electrons, i.e. for electrons where drift is compensated by diffusion.In this letter, we experimentally observe such unexpected drift-induced spin precession of stationary electron spins in the absence of an external magnetic field. Using an optical pump-probe technique, we investigate the spatiotemporal dynamics of locally excited spin polarization in an n-doped GaAs quantum well. Spin polarization probed at a fixed position is found to precess with a finite frequency, ω. This is identified as a consequence of cubic SOI, which affects spin drift and spin diffusion differently. A simple model predicts that drifting spins precess twice as much as spins that diffuse the same distance. This difference leads to a dependence ω ∝ β 3 v dr , where β 3 is the cubic SOI coefficient and v dr the drift velocity. We demonstrate quantitative agreement between model and experiment, and extract a β 3 in agreement with literature values. Monte-Carlo simulations confirm the validity of the model and pinpoint deviations that occur when the drift-induced SOI field is small compared arXiv:1602.05095v3 [cond-mat.mes-hall]

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Current-Controlled Spin Precession of Quasistationary Electrons in a Cubic Spin-Orbit Field

et al. 2016

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“…For example, in case of the spin Hall effect, the k-cubic Rashba term is predicted to give rise to a larger spin Hall conductivity [17][18][19]. Recently, the cubic-Rashba SOI has been reported in a two-dimensional hole gas (2DHG) in inversion asymmetric semiconductors InGaAs and GaAs [20,21], and a twodimensional electron gas formed at a surface of the inversion symmetric oxide SrTiO 3 [15]. However in the former case, the InGaAs and GaAs possess both BIA and SIA; thus, they are always influenced by both Dresselhaus and Rashba SOI contributions [22].…”

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confidence: 99%

“…Observed WL and WAL data have been analyzed by using the Iordanskii-Lyanda-Geller-Pikus (ILP) theory for magnetoconductivity, which took into account both the linear-and cubic-Rashba SOI [15,20,27]. The general formula of the ILP theory is provided in the Supplemental Material [28].…”

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Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGeQuantum Well

et al. 2014

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The spin-orbit interaction (SOI) of a two-dimensional hole gas in the inversion symmetric semiconductor Ge is studied in a strained-Ge=SiGe quantum well structure. We observe weak antilocalization (WAL) in the magnetoconductivity measurement, revealing that the WAL feature can be fully described by the k-cubic Rashba SOI theory. Furthermore, we demonstrate electric field control of the Rashba SOI. Our findings reveal that the heavy hole (HH) in strained Ge is a purely cubic Rashba system, which is consistent with the spin angular momentum m j ¼ AE3=2 nature of the HH wave function. DOI: 10.1103/PhysRevLett.113.086601 PACS numbers: 72.25.Dc, 73.20.Fz, 73.21.-b The spin-orbit interaction (SOI) in a two-dimensional system is a subject of considerable interest because the SOI induces spin splitting at a zero magnetic field, which is important in both fundamental research and electronic device applications [1]. Recent developments of SOI-induced phenomena in the solid state demonstrate many possibilities utilizing spin current and the emergence of new physics such as the spin interferometer [2,3], persistent spin helix [4,5], spin Hall effect [6][7][8], and quantum spin Hall effect [9,10]. Up to now, there have been two well-known SOIs existing in solids: the Dresselhaus SOI [11] due to bulk inversion asymmetry (BIA) in the crystal structure and the Rashba SOI [12,13] due to spatial inversion asymmetry (SIA).In low-dimensional systems, the Rashba SOI becomes more important because it is stronger at the heterointerface and can be controlled by an external electric field. Many of the pioneering studies on the SOI-induced phenomena mentioned above were performed in two-dimensional electron systems, where the Rashba SOI is described by the k-linear Rashba term. In the Hamiltonian, the k-linear Rashba term can be written aswhere σ AE ¼ 1=2ðσ x AE iσ y Þ denote combinations of Pauli spin matrices, k AE ¼ k x AE ik y , and k x , k y are the components of the in-plane wave vector k ∥ . The effective magnetic field Ω 1 ðk ∥ Þ acting on the transport carrier due to the k-linear Rashba term is illustrated in Fig. 1(a).Recently, a higher-order contribution of the Rashba SOI, the so-called k 3 (k-cubic) Rashba SOI, has received more attention [14,15]. The Hamiltonian for the k-cubic Rashba SOI is expressed asand the effective magnetic field Ω 3 ðk ∥ Þ in k space is illustrated in Fig. 1(b) [15]. There is a significant difference in the effective field symmetry between the k-linear and the k-cubic Rashba SOI with one and three rotations in k space, respectively. The k 3 symmetry of the SOI is an interesting subject because it influences all of the SOI-induced phenomena as opposed to the k-linear Rashba term. For example, in case of the spin Hall effect, the k-cubic Rashba term is predicted to give rise to a larger spin Hall conductivity [17][18][19].

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“…Поэтому в ряде случаев используемый подход оказывается предпочтительнее, чем определение m * по температурной эволюции одного пика, для которого тре-буется исследовать осцилляции ШдГ при значительно большем количестве температур. Полученные значения m * ≈ 0.14−0.15m e (m e -масса свободного электрона) хорошо согласуются с литературными данными для аналогичных структур без магнитной примеси [18,19]. Таким образом, флуктуационный потенциал магнит-ной примеси не приводит к существенному измене-нию m * .…”

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Квантовые поправки к проводимости и аномальный эффект Холла в квантовых ямах InGaAs с пространственно отделенной примесью Mn

Овешников¹,

Нехаева²

2017

Физика И Техника Полупроводников

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Исследован магнетотранспорт в гетероструктурах с пространственным разделением магнитной примеси Mn и квантовой ямы InGaAs. Анализ наблюдаемого эффекта слабой локализации с помощью формулы Хиками−Ларкина−Нагаоки приводит к аномально низкому значению префактора (0.4). Полученные данные указывают на то, что основным механизмом сбоя фазы может быть неупругое e−e рассеяние. Анализ проводимости и магнетосопротивления указывает на доминантную роль спин-зависимого рассеяния на флуктуациях магнитной подсистемы, что согласуется с увеличением амплитуды отрицательного магнетосо-противления и увеличением друдевской проводимости при охлаждении. Исследована природа аномального эффекта Холла в данных структурах, в частности присутствуют указания на наличие топологического вклада при низких температурах.

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Hole-hole interaction in a strainedInxGa1−xAstwo-dimensional system

Cited by 26 publications

References 23 publications

Current-Controlled Spin Precession of Quasistationary Electrons in a Cubic Spin-Orbit Field

Current-Controlled Spin Precession of Quasistationary Electrons in a Cubic Spin-Orbit Field

Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGeQuantum Well

Квантовые поправки к проводимости и аномальный эффект Холла в квантовых ямах InGaAs с пространственно отделенной примесью Mn

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