Hole mobility in thieno[3,2-b]thiophene oligomers

Malov, V. V.; Ghosh, Tanwistha; Vijayakumar, Chakkooth; Maslov, Mikhail M.; Katin, Konstantin P.; Unni, K. N. Narayanan; Тамеев, А. Р.

doi:10.1016/j.mencom.2019.03.035

Cited by 25 publications

(9 citation statements)

References 22 publications

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“…In thin solid layers, the charge carrier mobility was measured using the technique of charge extraction by linearly increasing voltage (CELIV) . Metal-insulator-semiconductor (MIS) diode structures, similar to those described earlier, , were prepared. Onto the ITO (indium-tin oxides) electrode of the ITO/glass substrate, a SiO 2 insulator layer of 70 nm in thickness was deposited by conventional magnetron sputtering.…”

Section: Methodsmentioning

confidence: 99%

Benzo[b]selenophene/thieno[3,2-b]indole-Based N,S,Se-Heteroacenes for Hole-Transporting Layers

et al. 2020

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Two series of new N,S,Se-heteroacenes, namely, 6H-benzo[4′,5′]selenopheno[2′,3′:4,5]thieno[3,2-b]indoles and 12H-benzo[4″,5″]selenopheno[2″,3″:4′,5′]thieno[2′,3′4,5]thieno[3,2-b]indoles, were successfully obtained using an effective strategy based on Fiesselmann thiophene and Fischer indole synthesis. The new molecules exhibit a large optical band gap (2.82 eV < E g opt < 3.23 eV) and their highest occupied molecular orbital (HOMO) energy formed by the plane π-core ranges between −5.2 and −5.6 eV, with the narrower optical band gap and lower HOMO level corresponding to selenated heteroacenes. In thin solid films of the heteroacenes, hole mobility measured using the conventional CELIV technique ranges between 10–5 and 10–4 cm2·V–1·s–1. All these make the proposed condensed-ring compounds a promising platform for the development of hole-transporting materials applicable in organic electronics.

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Section: Methodsmentioning

confidence: 99%

Benzo[b]selenophene/thieno[3,2-b]indole-Based N,S,Se-Heteroacenes for Hole-Transporting Layers

et al. 2020

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“…Charge carrier mobility was measured by the charge selective CELIV (charge extraction by linearly increasing voltage) technique [37,38] via the selective extraction of each charge carrier species in a SiO 2 inserted MIS (metal-insulator-semiconductor) structure [39]. A digital USB-oscilloscope (DL-Analog Discovery, Digilent Inc., Pullman, WA, USA) was both master pulse generator and transient current pulse recorder.…”

Section: Methodsmentioning

confidence: 99%

Conductivity and Density of States of New Polyphenylquinoline

et al. 2019

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Electrical, photoelectrical, and optical properties of thin films of a new heat-resistant polyphenylquinoline synthesized using facile methods were investigated. An analysis of the obtained temperature dependences of the dark conductivity and photoconductivity indicates the hopping mechanism of conductivity over localized states arranging at the energy distance of 0.8 eV from the Fermi level located inside the band gap of the investigated material. The optical band gap of the studied material was estimated from an analysis of the spectral dependences of the photoconductivity and absorption coefficient before (1.8–1.9 eV) and after (2.0–2.2 eV) annealing at temperatures exceeding 100 °C. The Gaussian character of the distribution of the localized states of density inside the band gap near the edges of the bands was established. A mechanism of changes in the optical band gap of the investigating polymer under its annealing is proposed.

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“…As a result, for measuring the mobility of charge carriers by the MIS-CELIV technique, the samples of the glass/ITO/SiO 2 (70 nm)/D1-3/mCP (10%)/Al (80 nm) architecture were prepared. More experimental details and calculations of the charge carrier mobility are described in [54,[58][59][60] and Supplementary Materials.…”

Section: Charge Mobility Measurementsmentioning

confidence: 99%

New Unsymmetrically Substituted Benzothiadiazole-Based Luminophores: Synthesis, Optical, Electrochemical Studies, Charge Transport, and Electroluminescent Characteristics

et al. 2021

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Three new benzothiadiazole (BTD)-containing luminophores with different configurations of aryl linkers have been prepared via Pd-catalyzed cross-coupling Suzuki and Buchwald–Hartwig reactions. Photophysical and electroluminescent properties of the compounds were investigated to estimate their potential for optoelectronic applications. All synthesized structures have sufficiently high quantum yields in film. The BTD with aryl bridged carbazole unit demonstrated the highest electrons and holes mobility in a series. OLED with light-emitting layer (EML) based on this compound exhibited the highest brightness, as well as current and luminous efficiency. The synthesized compounds are not only luminophores with a high photoluminescence quantum yield, but also active transport centers for charge carriers in EML of OLED devices.

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Hole mobility in thieno[3,2-b]thiophene oligomers

Cited by 25 publications

References 22 publications

Benzo[b]selenophene/thieno[3,2-b]indole-Based N,S,Se-Heteroacenes for Hole-Transporting Layers

Benzo[b]selenophene/thieno[3,2-b]indole-Based N,S,Se-Heteroacenes for Hole-Transporting Layers

Conductivity and Density of States of New Polyphenylquinoline

New Unsymmetrically Substituted Benzothiadiazole-Based Luminophores: Synthesis, Optical, Electrochemical Studies, Charge Transport, and Electroluminescent Characteristics

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