Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise

Bosco, Stefano; Hetényi, Bence; Loss, Daniel

doi:10.48550/arxiv.2011.09417

Cited by 2 publications

(4 citation statements)

References 81 publications

(175 reference statements)

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“…Compared to other one-dimensional systems such as Ge/Si core/shell nanowires, a crucial feature of the Ge HWs studied here is their triangular cross-section 50 . The lack of inversion symmetry of the cross-section can lead to a large intrinsic SOI that is dependent on the orientation of the wire even without external electric fields 63 . Because the wires grow horizontally along either the [100] or [010] direction 50 , the intrinsic SOF points in the x-direction according to the theoretical model in ref 63.…”

Section: / 20mentioning

confidence: 99%

Anisotropic g-Factor and Spin–Orbit Field in a Germanium Hut Wire Double Quantum Dot

Zhang

Gao

et al. 2021

Nano Lett.

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Holes in nanowires have drawn significant attention in recent years because of the strong spin-orbit interaction, which plays an important role in constructing Majorana zero modes and manipulating spin-orbit qubits. Here, we experimentally investigate the spin-orbit field in a hole double quantum dot in germanium (Ge) hut wires by measuring the leakage current in the Pauli spin blockade regime. By varying the applied magnetic field and interdot detuning, we demonstrate two different spin mixing mechanisms: spin-flip cotunneling to/from the reservoirs, and spin-orbit interaction within the double dot. By rotating the direction of the magnetic field, we observe strong anisotropy of the leakage current at a finite magnetic field induced by the spin-orbit interaction. Through numerical simulation, we extract the full 𝑔-tensor and find that the direction of the spin-orbit field is in-plane, and at an azimuth angle of 59° to the nanowire. We attribute our observations to the existence of a strong spin-orbit interaction along the nanowire, which may have originated from the interface inversion asymmetry in our system.

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Section: / 20mentioning

confidence: 99%

Anisotropic g-Factor and Spin–Orbit Field in a Germanium Hut Wire Double Quantum Dot

Zhang

Gao

et al. 2021

Nano Lett.

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“…For holes, in comparison to electrons, no additional device components are required, which reduces device complexity for the benefit of scalability. Furthermore, for holes in Si nanowires or fin field-effect transistors (FinFETs) the SOI can be exceptionally strong and fully tunable, allowing for a switchable coupling strength and a way to mitigate the effects of charge noise [22,23,32]. Moreover, hole spins are better protected against nuclear spin noise due to their weak hyperfine interaction [33,34].…”

mentioning

confidence: 99%

“…In addition, a high degree of process flexibility and a short turnaround are achieved by using electron-beam instead of advanced optical lithography [35]. The fin provides a one-dimensional confinement for the holes, enabling fast and electrically tunable effective spin-1/2 qubits [22,23,32]. We demonstrate EDSR-based spin control with Rabi frequencies up to 150 MHz and voltage-tunable qubit frequencies, a feature employed to implement z-rotations as fast as 45 MHz.…”

mentioning

confidence: 99%

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A hole spin qubit in a fin field-effect transistor above 4 kelvin

Camenzind,

Geyer,

Fuhrer

et al. 2021

Preprint

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Quantum computing's greatest challenge is scaling up. Several decades ago, classical computers faced the same problem and a single solution emerged: very-large-scale integration using silicon. Today's silicon chips consist of billions of field-effect transistors (FinFETs) in which current flow along the fin-shaped channel is controlled by wrap-around gates. The semiconductor industry currently employs fins of sub-10 nm width, small enough for quantum applications: at low temperature, an electron or hole can be trapped under the gate and serve as a spin qubit. An attractive benefit of silicon's advantageous scaling properties is that quantum hardware and its classical control circuitry can be integrated in the same package. This, however, requires qubit operation at temperatures greater than 1 K where the cooling is sufficient to overcome the heat dissipation. Here, we demonstrate that a silicon FinFET is an excellent host for spin qubits that operate even above 4 K. We achieve fast electrical control of hole spins with driving frequencies up to 150 MHz and single-qubit gate fidelities at the fault-tolerance threshold. The number of spin rotations before coherence is lost at these "hot" temperatures already matches or exceeds values on hole spin qubits at mK temperatures. While our devices feature both industry compatibility and quality, they are fabricated in a flexible and agile way to accelerate their development. This work paves the way towards large-scale integration of all-electrical and ultrafast spin qubits.Quantum dot (QD) spin qubits [1,2] in silicon (Si) have great potential for application in largescale quantum computation [3], owing to their long coherence times [4] and high quality factors [5][6][7]. Moreover, state-of-the-art complementary metal-oxide-semiconductor (CMOS) manufacturing processes [8][9][10] can be employed to engineer a dense array of interconnected spin qubits [11,12].Inspired by the great success of conventional integrated circuits, on-chip integration of the classical control electronics with the qubit array has been proposed to overcome the challenge in wiring up large numbers of multi-terminal QD devices [13]. Since the electronics produce heat, the amount of control functionality that can be implemented strongly depends on the available cooling power.

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Hole spin qubits in Si FinFETs with fully tunable spin-orbit coupling and sweet spots for charge noise

Cited by 2 publications

References 81 publications

Anisotropic g-Factor and Spin–Orbit Field in a Germanium Hut Wire Double Quantum Dot

Anisotropic g-Factor and Spin–Orbit Field in a Germanium Hut Wire Double Quantum Dot

A hole spin qubit in a fin field-effect transistor above 4 kelvin

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