Hole transport free carbon-based high thermal stability CsPbI_1.2Br_1.8 solar cells with an amorphous InGaZnO₄ electron transport layer

Abstract

In this work, sol–gel derived a-IGZO thin films with different annealing temperature are used as the ETL in inorganic perovskite solar cells, which is helpful to the device power conversion efficiency, thermal stability and low-cost production.

Applications of amorphous inorganics as novel functional materials

“…97 Amorphous InGaZnO 4 (a-IGZO), the most famous semiconductive material, is a transistor channel material that demonstrates the success of non-crystalline oxides. 98 A-IGZO is initially applied in thin-film-transistor display backplanes, and it has been utilized as a transistor channel material for static random-access memory and has served as a memory selector in dynamic random access memory devices. 99 Besides, amorphous metallic oxides can also serve as a catalyst for the reaction of chemicals, such as hydrogen evolution reaction and oxygen evolution reaction.…”