2007
DOI: 10.1016/j.sna.2006.06.030
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Hole-type two-dimensional photonic crystal fabricated in silicon on insulator wafers

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Cited by 7 publications
(5 citation statements)
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“…A phenomenon usually occurring in DRIE-the aspect ratio dependent etching (ARDE) [18,19]-was used to build the notches into the bug-type sacrificial bridges. The etching depth depends on the width of the trench opening.…”
Section: Processing and Resultsmentioning
confidence: 99%
“…A phenomenon usually occurring in DRIE-the aspect ratio dependent etching (ARDE) [18,19]-was used to build the notches into the bug-type sacrificial bridges. The etching depth depends on the width of the trench opening.…”
Section: Processing and Resultsmentioning
confidence: 99%
“…Then, the PR is deposited on the substrate to define the pattern of the metal structures. Finally, the metal film is etched using different technologies, such as DRIE [104,105], electron beam lithography [106] etc.…”
Section: Surface Micromachining Technologymentioning
confidence: 99%
“…We suggest to use a special phenomenon encountered in DRIE processes, the Aspect Ratio Dependent Etching (ARDE) (see figure 1) [10,11]. Etching depth is dependent on ‡ Minus sign is used when de-tethering take too much time.…”
Section: Notching Principle For Drie Processmentioning
confidence: 99%
“…To perform high aspect ratio geometry, the DRIE process is commonly used in microfabrication because it allows an accurate control of the notch's depth [9]. We suggest using a special phenomenon encountered in DRIE processes, the aspect ratio dependent etching (ARDE) (see figure 1) [10,11]. Etching depth is dependent on etching width, i.e.…”
Section: Notching Principle For Drie Processmentioning
confidence: 99%