Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope

Vaid, Alok; Yan, Bin Bin; Jiang, Yun Tao; Kelling, Mark; Hartig, Carsten; Allgair, John A.; Ebersbach, Peter; Sendelbach, Matthew; Rana, Narender; Katnani, Ahmad D.; Mclellan, Erin; Archie, Charles N.; Bozdog, Cornel; Kim, Helen; Sendler, Michael; Ng, Susan; Sherman, B.; Brill, Boaz; Turovets, Igor; Urensky, Ronen

doi:10.1117/1.3655726

Cited by 16 publications

(15 citation statements)

References 13 publications

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“…Improve reference metrology: This can be done by improving the RMS measurement quality through means such as repeatability or resolution enhancements, thereby reducingV S . 7 where optical CD metrology (another name for scatterometry) assists CD atomic force microscopy (CD-AFM). An example is the use of dual beam FIB for TEM sample preparation.…”

Section: Reducing the Cost Of Reference Metrologymentioning

confidence: 99%

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Effect of measurement error budgets and hybrid metrology on qualification metrology sampling

Sendelbach

Sarig

Wakamoto

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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Until now, metrologists had no statistics-based method to determine the sampling needed for an experiment before the start that accuracy experiment. We show a solution to this problem called inverse total measurement uncertainty (TMU) analysis, by presenting statistically based equations that allow the user to estimate the needed sampling after providing appropriate inputs, allowing him to make important "risk versus reward" sampling, cost, and equipment decisions. Application examples using experimental data from scatterometry and critical dimension scanning electron microscope tools are used first to demonstrate how the inverse TMU analysis methodology can be used to make intelligent sampling decisions and then to reveal why low sampling can lead to unstable and misleading results. One model is developed that can help experimenters minimize sampling costs. A second cost model reveals the inadequacy of some current sampling practices-and the enormous costs associated with sampling that provides reasonable levels of certainty in the result. We introduce the strategies on how to manage and mitigate these costs and begin the discussion on how fabs are able to manufacture devices using minimal reference sampling when qualifying metrology steps. Finally, the relationship between inverse TMU analysis and hybrid metrology is explored. Sendelbach et al.: Effect of measurement error budgets and hybrid metrology. . . Downloaded From: http://nanolithography.spiedigitallibrary.org/ on 05/14/2015 Terms of Use: http://spiedl.org/terms

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Section: Reducing the Cost Of Reference Metrologymentioning

confidence: 99%

“…For this, we point to an example previously published study, 7 where the CD measurement from a CD-SEM is affected by the structure's sidewall angle (SWA). For this, we point to an example previously published study, 7 where the CD measurement from a CD-SEM is affected by the structure's sidewall angle (SWA).…”

Section: Hybrid-based Reference Measurement Systemmentioning

confidence: 99%

Effect of measurement error budgets and hybrid metrology on qualification metrology sampling

Sendelbach

Sarig

Wakamoto

et al. 2014

J. Micro/Nanolith. MEMS MOEMS

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“…Hybrid metrology has gained significant recognition in a short period of time as an approach to reduce overall measurement uncertainty and optimize measurement throughput while having the potential to yield more complete information [1][2][3][4][5][6][7][8][9]. The method allows for rigorous combinations of two or more different measurement techniques into a single result.…”

Section: Introductionmentioning

confidence: 99%

Optimizing hybrid metrology through a consistent multi-tool parameter set and uncertainty model

et al. 2014

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There has been significant interest in hybrid metrology as a novel method for reducing overall measurement uncertainty and optimizing measurement throughput (speed) through rigorous combinations of two or more different measurement techniques into a single result. This approach is essential for advanced 3-D metrology when performing model-based critical dimension measurements. However, a number of fundamental challenges present themselves with regard to consistent noise and measurement uncertainty models across hardware platforms, and the need for a standardized set of model parameters. This is of paramount concern when the various techniques have substantially different models and underlying physics. In this paper we present realistic examples using scanning electron microscopy, atomic force microscopy, and optical critical dimension (CD) methods applied to sub-20 nm dense feature sets. We will show reduced measurement uncertainties using hybrid metrology on 15 nm CD features and evaluate approaches to adapt quantitative hybrid metrology into a high volume manufacturing environment.

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“…Metrology methods such as scatterometry and critical dimension scanning electron microscope (CDSEM) are typically used for inline CD measurement. The measurement performance of an SEM tool is impacted by resist shrinkage and charging effect 4 . Scatterometry is known for its fast and nondestructive metrology method which provides complete profile information of the fins in front-end-of-line (FEOL) and the interconnect lines in back-end-of-line (BEOL) 5 .…”

Section: Introductionmentioning

confidence: 99%

“…The measurement performance of an SEM tool is impacted by resist shrinkage and charging effect. 4 Scatterometry is known for its fast and nondestructive metrology method which provides complete profile information of the fins in front-end-of-line (FEOL) and the interconnect lines in back-end-of-line (BEOL). 5 However, traditional scatterometry model building requires a long time to solution, especially, research and development (R&D), and modeling of nonperiodic structures can take even longer time and be problematic.…”

Section: Introductionmentioning

confidence: 99%

Investigating metal oxide resists for patterning 28-nm pitch structures using single exposure extreme ultraviolet: defectivity, electrical test, and voltage contrast study

Sarkar

Das

Carballo

et al. 2022

J. Micro/Nanopattern. Mats. Metro.

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Background: To keep up with the logic area scaling, back-end-of-line (BEOL) structures are reduced to smaller pitches, requiring faster and reliable metrology and defect detection solution.Aim: Metrology and detailed defect inspection at the early phases of process optimization.Approach: Single exposure (SE) 0.33NA extreme ultraviolet (EUV) lithography was used along with a bright field mask for patterning in a metal damascene process flow of BEOL structures. We also used a dual damascene process flow for voltage contrast (VC) metrology study.Results: Scatterometry technique, together with machine learning (ML), allowed us to have fast and accurate measurements of line-space (LS) and tip-to-tip (T2T) critical dimension (CD), and prediction of electrical performance. We demonstrated characterization results of stochastic defects across various test structures of 28-nm pitch devices. We used a large-area electron beam (e-beam) tool for high-speed large-area inspection which provided us with the quick feedback on defect signatures and scope for further root cause analysis. On a separate dual damascene integration flow, we used VC metrology to capture different failure modes in the patterning process of metal trenches with tight T2T and corresponding overlapping vias. Conclusions:We studied the impact of stochastic resist defects on electrical measurements of meander (MR) and fork-fork (FF) structures, and showed that large electrical test structures, built with a relatively simple patterning flow, can be used at the early stages of resist and patterning development, as the electrical failures are almost exclusively caused by the resist defects. In the dual damascene flow, we demonstrated that VC metrology is useful to determine the design rule parameters and capture different failure mechanisms.

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Holistic metrology approach: hybrid metrology utilizing scatterometry, critical dimension-atomic force microscope and critical dimension-scanning electron microscope

Cited by 16 publications

References 13 publications

Effect of measurement error budgets and hybrid metrology on qualification metrology sampling

Effect of measurement error budgets and hybrid metrology on qualification metrology sampling

Optimizing hybrid metrology through a consistent multi-tool parameter set and uncertainty model

Investigating metal oxide resists for patterning 28-nm pitch structures using single exposure extreme ultraviolet: defectivity, electrical test, and voltage contrast study

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