The B-site doped CsPbI3 has been demonstrated to be
very promising for photovoltaics owing to its low black phase transition
temperature. Though B-site doped black-CsPbI3 perovskites
have been successfully achieved by solution-processing, it is unclear
whether these systems are available by other methods such as vacuum
deposition. In this work, heterovalent doped CsPb1–x
Bi
x
I3 is targeted.
To incorporate Bi3+ into the final film via vacuum deposition,
the solid solution precursor Pb1–x
Bi
x
I2 (0.01 ≤ x ≤ 0.04) is developed. However, these coevaporated
films not only are dominated by another hexagonal perovskite phase
but also fail to decrease the black phase transition temperature.
The role of Bi3+ in the formation of the black phase is
further studied by solution methods with different types of precursors.
It is demonstrated that the key factor in the low-temperature black
phase transition is small grain size, as well as the colloid size
within the precursor solution, rather than simple substitution of
Pb2+ with Bi3+.