Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures

Bıyıklı, Necmi; Özgit-Akgün, Çaǧla; Goldenberg, Eda; Haider, Ali; Kizir, Seda; Uyar, Tamer; Bolat, Sami; Tekcan, Burak; Okyay, Ali Kemal

doi:10.1109/elnano.2015.7146876

Cited by 2 publications

(2 citation statements)

References 14 publications

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“…Deposited films on Si (100) were polycrystalline with hexagonal (002) preferred orientation, however, the same preferred orientation was not observed on c-plane sapphire substrates [131]. Use of HCPEALD was found to be quite effective in decreasing the oxygen impurity within GaN films by more than two orders of magnitude [131][132][133][134][135][136]. Motamedi et al reported PEALD of GaN with Ga(C 2 H 5 ) 3 and forming gas mixture (95% N 2 /5% H 2 ) plasma reactants at 275 °C.…”

Section: Nitridesmentioning

confidence: 96%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

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In this paper, we present the progress in the growth of nanoscale semiconductors grown via atomic layer deposition (ALD). After the adoption by semiconductor chip industry, ALD became a widespread tool to grow functional films and conformal ultra-thin coatings for various applications. Based on self-limiting and ligand-exchange-based surface reactions, ALD enabled the low-temperature growth of nanoscale dielectric, metal, and semiconductor materials. Being able to deposit wafer-scale uniform semiconductor films at relatively low-temperatures, with sub-monolayer thickness control and ultimate conformality, makes ALD attractive for semiconductor device applications. Towards this end, precursors and low-temperature growth recipes are developed to deposit crystalline thin films for compound and elemental semiconductors. Conventional thermal ALD as well as plasma-assisted and radical-enhanced techniques have been exploited to achieve device-compatible film quality. Metal-oxides, III-nitrides, sulfides, and selenides are among the most popular semiconductor material families studied via ALD technology. Besides thin films, ALD can grow nanostructured semiconductors as well using either template-assisted growth methods or bottom-up controlled nucleation mechanisms. Among the demonstrated semiconductor nanostructures are nanoparticles, nano/ quantum-dots, nanowires, nanotubes, nanofibers, nanopillars, hollow and core-shell versions of the afore-mentioned nanostructures, and 2D materials including transition metal dichalcogenides and graphene. ALD-grown nanoscale semiconductor materials find applications in a vast amount of applications including functional coatings, catalysis and photocatalysis, renewable energy conversion and storage, chemical sensing, opto-electronics, and flexible electronics. In this review, we give an overview of the current state-of-the-art in ALD-based nanoscale semiconductor research including the already demonstrated and future applications.

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Section: Nitridesmentioning

confidence: 96%

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Bıyıklı

Haider

2017

Semicond. Sci. Technol.

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“…GaN (PE-ALD) [1,8,10,11,13,14,16,20,21,30,35] GaN devices (PE-ALD) [2,4,10,11,17] Nanofibers (PE-ALD) [5,[9][10][11]] Nanostructures (ALD) [18,21] AlGaN (PE-ALD) [1,3] AlN (PE-ALD) [1,5,[19][20][21]29,32] BN (PE-ALD) [5,6,11] InN (PE-ALD) [10,11,15,[19][20][21]33,34] BInN and BGaN (PE-ALD)…”

Section: Materials (And Process) Referencementioning

confidence: 99%

Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes

Butcher

Georgiev²,

Georgieva³

2021

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Recent designs have allowed hollow cathode gas plasma sources to be adopted for use in plasma-enhanced atomic layer deposition with the benefit of lower oxygen contamination for non-oxide films (a brief review of this is provided). From a design perspective, the cathode metal is of particular interest since—for a given set of conditions—the metal work function should determine the density of electron emission that drives the hollow cathode effect. However, we found that relatively rapid surface modification of the metal cathodes in the first hour or more of operation has a stronger influence. Langmuir probe measurements and hollow cathode electrical characteristics were used to study nitrogen and oxygen plasma surface modification of aluminum and stainless-steel hollow cathodes. It was found that the nitridation and oxidation of these metal cathodes resulted in higher plasma densities, in some cases by more than an order of magnitude, and a wider range of pressure operation. Moreover, it was initially thought that the use of aluminum cathodes would not be practical for gas plasma applications, as aluminum is extremely soft and susceptible to sputtering; however, it was found that oxide and nitride modification of the surface could protect the cathodes from such problems, possibly making them viable.

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Hollow-cathode plasma-assisted atomic layer deposition: A novel route for low-temperature synthesis of crystalline III-nitride thin films and nanostructures

Cited by 2 publications

References 14 publications

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Atomic layer deposition: an enabling technology for the growth of functional nanoscale semiconductors

Recent Advances in Hollow Cathode Technology for Plasma-Enhanced ALD—Plasma Surface Modifications for Aluminum and Stainless-Steel Cathodes

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