“…In these practical STATCOM systems implemented in the field, various power semiconductors have been employed i.e., silicon-controlled rectifiers (conventional fast switching thyristors) [5], Gate Turn-off thyristors (GTO) [6,7,[9][10][11]14], Insulated Gate Bipolar Transistors (IGBT) [8,12,13,15,16,[19][20][21][22]26,27], Injection Enhanced Insulated Gate Transistor (IEGT) [15] and Integrated Gate Commutated Thyristors (IGCT) [18,[23][24][25]. Two-level, six-pulse bridge converters with relatively high switching frequencies and relatively low installed capacities are usually being the characteristics of Distribution type STATCOM (D-STATCOM) systems [18,[23][24][25].…”