Holographic and e-Beam Image Recording in Ge5As37S58–Se Nanomultilayer Structures

Stronski, A.; Achimova, E.; Paiuk, O.; Meshalkin, A.; Abashkin, Vladimir; Lytvyn, O. S.; Сергеев, С. А.; Prisacar, A.; Triduh, G.

doi:10.1186/s11671-016-1235-x

Cited by 23 publications

(6 citation statements)

References 26 publications

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“…Geometric parameters and shape of the reliefs depend on the chemical composition of the film. Recently, amorphous chalcogenides from the Ge-As-S system have been intensively studied [13][14][15][16][17][18][19][20], which are characterized by longterm stability as well as good transmission in the visible and near-infrared range. Photo-induced effects in thin films from Ge-As-S glasses were investigated in papers [21,22].…”

Section: Investigations Of Electron Beam Exposure Onmentioning

confidence: 99%

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

Revutska¹,

Shylenko²,

Stronski³

et al. 2020

KPI SN

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Background. Chalcogenide glasses comprise a unique materials platform and are attractive in view of various applications that make use their intriguing characteristic, the ability to form surface-relief patterns. The interaction of these materials with the electron beam is of interest due to diversity of physical phenomena induced in chalcogenide films by laser irradiation. Objective. The purpose of the paper is to study direct (without selective etching) surface relief formation of optical elements periodic nanostructures on thermal vacuum evaporated film As3S77Ge20 of ∼8.3 μm thickness using electron beam lithography, as well as investigate the changes in surface nanostructures height and shape depending on exposure. Methods. The chemical composition was determined by energy dispersive analysis of X-rays. The film was irradiated by an electron beam using a scanning electron microscope. The influence of electron beam irradiation on As3S77Ge20 amorphous chalcogenide thin film was investigated. Surface relief of the film was tapped by atomic force microscope. Results. The exposure dose G varied from 12 mC•cm −2 to 12 C•cm −2. The formation of cones with Gaussian profile on the surfaces of the films was detected after local electron irradiation. Exposition dependent evolution of height surface nanostructures has been detected. It can be seen that for G < 2400 mC•cm −2 the height of the surface relief gradually grows to 100-125 nm and for G > 2400 mC•cm −2 , relief height decreases. The initial and inversion doses of relief formation on this film have found. For 6,6 μm pitch is equal to G0 = 9,60 mC•cm-2 , and the inversion dose of the surface relief shape G1= 31.18 C•cm −2. At d = 10 μm, these parameters are G 0 = 6,98 mC•cm −2 and G1 = 36.19 C•cm −2. The dependences () h = F G at increasing interval (16 mC•cm −2-1200 mC•cm −2) for d = 6.6 μm and d = 10 μm were fitted by exponential function. Conclusions. The changing of shape and parameters of the obtained surface relief on As3S77Ge20 film can be explained by the charge model. Our investigations have demonstrated that studied As3S77Ge20 composition is suitable for e-beam recording. These results show that As3S77Ge20 films can be used for fabrication of the optical elements.

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Section: Investigations Of Electron Beam Exposure Onmentioning

confidence: 99%

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

Revutska¹,

Shylenko²,

Stronski³

et al. 2020

KPI SN

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“…Рельефно-фазовые гологра-фические решетки могут быть получены непосредствен-но в процессе их записи в многослойных наноструктурах Ge 5 As 37 S 58 −Se [109]. В слоях As 40 S 60 : Mn−Se запись рельефных голографических решеток осуществлялась в магнитном поле [110].…”

Section: неорганические светочувствительные слоиunclassified

Современное Состояние Разработки Светочувствительных Сред Для Голографии (Обзор)

Барачевский¹

2018

Журнал Технической Физики

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“…Composite nanomultilayer structures on the base of chalcogenide glasses are particularly interesting because they enable to realize one-step direct recording of surface relief without selective etching [ 18 – 28 ]. Multilayer structures are the simplest artificial nanostructures which can be rather easily produced with controlled geometrical parameters and investigated as thin films.…”

Section: Introductionmentioning

confidence: 99%

Direct Magnetic Relief Recording Using As40S60: Mn–Se Nanocomposite Multilayer Structures

et al. 2017

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Processes of holographic recording of surface relief structures using As2S3:Mn–Se multilayer nanostructures as registering media were studied in this paper. Optical properties of As2S3:Mn, Se layers, and As2S3:Mn–Se multilayer nanostructures were investigated. Values of optical bandgaps were obtained from Tauc dependencies. Surface relief diffraction gratings were recorded. Direct one-stage formation of surface relief using multilayer nanostructures is considered. For the first time, possibility of direct formation of magnetic relief simultaneous with surface relief formation under optical recording using As2S3:Mn–Se multilayer nanostructures is shown.

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Holographic and e-Beam Image Recording in Ge5As37S58–Se Nanomultilayer Structures

Cited by 23 publications

References 26 publications

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

THE FORMATION OF SURFACE NANOSTRUCTURES ON As-S-Ge CHALCOGENIDE FILM AFTER E-BEAM EXPOSURE

Современное Состояние Разработки Светочувствительных Сред Для Голографии (Обзор)

Direct Magnetic Relief Recording Using As40S60: Mn–Se Nanocomposite Multilayer Structures

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