Homo-Junction pn Diode Using p-Type SnO and n-Type SnO2 Thin Films

Um, Joseph; Kim, Sarah Eunkyung

doi:10.1149/2.0051408ssl

Cited by 30 publications

(25 citation statements)

References 39 publications

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“…About 80 nm of interfacial layer was found by TEM, which was claimed to be responsible for the non‐ideal operation of this p–n diode. Um and Kim also reported a p‐SnO/n‐SnO 2 diode by reactive magnetron sputtering, where both n‐ and p‐type films were prepared in the same deposition by varying the deposition parameters, followed by thermal annealing at 300 °C for 2 h. XPS measurements confirmed the dominance of the Sn 2+ and Sn 4+ oxidation states in the p‐ and n‐type layers, respectively. The diode had a knee voltage of 2.3 V, but no further information on the device operation was reported.…”

Section: Performance Of Oxide‐based P–n Junctionsmentioning

confidence: 78%

“…Fabrication of SnO thin films has been extensively evaluated using a series of methods, including physical vapor deposition (PVD) routes, such as PLD, EB, RFMS, and DCMS using Sn, SnO, and SnO 2 targets on both rigid and flexible substrates. The Hall mobility and carrier (hole) concentrations, along with the deposition conditions are listed in Table 3 for relatively recent studies.…”

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

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Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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The development of transparent p-type oxide semiconductors with good performance could be a true enabler for a variety of applications, where transparency, power efficiency and more circuit complexity are needed. Such applications include transparent electronics, displays, sensors, photovoltaics, memristors, and electrochromics. Hence, we review recent developments in materials and devices based on p-type oxide semiconductors, including ternary Cu-bearing oxides, binary copper oxides, tin monoxide, spinel oxides and nickel oxides. The crystal and electronic structures of these materials are reviewed, along with approaches to enhance valence band dispersion to reduce effective mass and increase mobility.Strategies to reduce the interfacial defects, off state current, and material instability are discussed. Furthermore, we show that promising progress has been made in the performance of various type of devices based on p-type oxides. For example, transparent oxide-based p-n junction diodes have experienced significantly improved performance, where rectification ratios >10 7 have been achieved. The performances of thin-film transistors and inverters have also been modestly improved. For example, thin-film transistors with field-effect mobilities exceeding 5 cm 2 V -1 s -1 have been reported. In addition, several innovative approaches were developed to fabricate transparent complementary metal oxide semiconductor (CMOS) 2 devices. These approaches include novel device fabrication schemes and utilization of surface chemistry effects, resulting in good inverter gains (as high as 120 has been demonstrated).Some progress has also been made in reducing the interfacial defects and off state currents using capping layers, high quality dielectrics and surface treatments. Resistive memory devices and hole transport layer in optoelectronic devices, mostly based on nickel oxide, have made decent progress. Transparent ferroelectric memory devices comprising p-type oxides have also been reported recently showing good hole mobilities (~3.3 cm 2 V -1 s -1 ) and good retention characteristics. This even includes multistate memory devices that show good stability. Nanoscale (e.g. nanowire) devices have now been reported using p-type oxides and do show performance improvements at scaled device geometry. New process developments have been reported, and some p-type oxides can now be deposited using atomic layer deposition and chemical routes, with promising performances. However, despite these recent developments, p-type oxides still lag in performance behind the n-type counterparts, which have entered volume production in the display market. The recent successes along with the hurdles that stand in the way of commercial success of p-type oxide semiconductors are presented in this review.

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Section: Performance Of Oxide‐based P–n Junctionsmentioning

confidence: 78%

Section: Discovery and Synthesis Of Hole‐transporting (P‐type) Oxidesmentioning

confidence: 99%

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

et al. 2016

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“…reported the fabrication of SnO/SnO 2 p-n junction using reactive RF magnetron sputtering technique [69]. However, the forward current through the junction was of the order of micro amperes and the threshold voltage was very high.…”

Section: Sno-zno Systemmentioning

confidence: 99%

“…SnO has both its band edges between electron and hole doping limit. Various data are taken from[8,[67][68][69][70][71][72][73][74].…”

mentioning

confidence: 99%

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

et al. 2016

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Tin monoxide (SnO) is considered as one of the most important p-type oxidesavailable to date. Thin films ofSnO have been reported to possess bothan indirect bandgap (~0.7 eV)anda direct bandgap (~2.8 eV) withquite highhole mobility (~7 cm 2 /Vs) values. Moreover, thehole density in these films can be tuned from 10 15-10 19 cm-3 just by controlling the thin film deposition parameters. Because of the above attributes, SnO thin films offer great potential for fabricating modern electronic and optoelectronic devices. In this article, we are reviewing the most recent developments in this field and also presenting some of our own results on SnO thin films grown by pulsed laser deposition technique. We have also proposed a p-n hetero-structure comprising of p-type SnO and n-type ZnO which can pave way for realizing next-generation, all-oxide transparent electronic devices.

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“…From the deconvoluted Sn 3d and O 1s spectra, it can be determined that the SnO thin films contained two oxidation states: divalent SnO (Sn 2+ ) and tetravalent SnO 2 (Sn 4+ ) without a metallic Sn (Sn 0 ) state, where the Sn 2+ component was dominantly presented. As the metastable SnO is easily oxidized to SnO 2 , the tetravalent state is generally observed in the SnO film surface even though the films are grown under a low oxygen partial pressure or PDA is not performed . In the case of the O 1s orbital, the chemical peak associated with adsorbed oxygen caused by the exposure of the sample to air was also observed, which confirmed that the involvement of Sn 4+ was due to the exposure of the film to the atmosphere.…”

Section: Resultsmentioning

confidence: 75%

Reduction of the Hysteresis Voltage in Atomic‐Layer‐Deposited p‐Type SnO Thin‐Film Transistors by Adopting an Al₂O₃ Interfacial Layer

Jang

Yeu

Kim

et al. 2019

Adv Elect Materials

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The origin of hysteresis in the drain–source current (IDS)–gate‐source voltage (VGS) characteristics of atomic‐layer‐deposited (ALD) p‐type SnO thin‐film transistors (TFTs) is examined by adding ALD Al2O3 interfacial layers (IL) between the SnO channel layer and the SiO2 gate insulator (GI) layer. SnO TFTs with SiO2 GI exhibit a large hysteresis voltage (Vhy) due to the trap state density near the interface between the SnO active layer and the SiO2 GI (known as the border trap). Both experimental results and theoretical calculations show that the origin of border traps is the SnSi+0 gap states in SiO2, which is induced by the Sn diffusion into the SiO2 layer. The use of Al2O3 films as ILs suppresses this diffusion. The effectiveness, however, is dependent on the thickness, crystallinity, and density of the Al2O3 films. The Vhy of the SnO TFTs can be decreased when the thickness and density of the ILs is increased if the amorphous structure of the Al2O3 IL is maintained after the rapid thermal annealing process. p‐Type ALD SnO TFTs with optimum ILs exhibit a high on‐off ratio of IDS (1.2 × 105), high field‐effect mobility (1.6 cm2 V−1 s−1), and a small Vhy (0.2 V).

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Homo-Junction pn Diode Using p-Type SnO and n-Type SnO2 Thin Films

Cited by 30 publications

References 39 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Reduction of the Hysteresis Voltage in Atomic‐Layer‐Deposited p‐Type SnO Thin‐Film Transistors by Adopting an Al₂O₃ Interfacial Layer

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Homo-Junction pn Diode Using p-Type SnO and n-Type SnO2 Thin Films

Cited by 30 publications

References 39 publications

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

Recent Developments in p‐Type Oxide Semiconductor Materials and Devices

P-type SnO thin films and SnO/ZnO heterostructures for all-oxide electronic and optoelectronic device applications

Reduction of the Hysteresis Voltage in Atomic‐Layer‐Deposited p‐Type SnO Thin‐Film Transistors by Adopting an Al2O3 Interfacial Layer

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Product

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About

Reduction of the Hysteresis Voltage in Atomic‐Layer‐Deposited p‐Type SnO Thin‐Film Transistors by Adopting an Al₂O₃ Interfacial Layer