Homoepitaxial diamond films with large terraces

Hayashi, Kazushi; Yamanaka, Sadanori; Okushi, Hideyo; Kajimura, K.

doi:10.1063/1.115932

Cited by 77 publications

(63 citation statements)

References 1 publication

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“…Cardona and Ley [44] experimentally observed step-flow etching of diamond (100) surfaces by AFM and confirmed [46 ] state that the energy at which the spectra extrapolates linearly to zero determines w, and the polishing of diamond surfaces by hydrogen plasma treatment. The corrugated structure therefore they established this way of determining energy levels for photoemission studies in semiconapproximately 3.9 eV will be discussed in Section 4.3.4. ductors.…”

Section: Sample Description and Preparationmentioning

confidence: 85%

Electron affinity and work function of differently oriented and doped diamond surfaces determined by photoelectron spectroscopy

et al. 1998

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We investigate band bending, electron affinity and work function of differently terminated, doped and oriented diamond surfaces by X-ray and ultraviolet photoelectron spectroscopy ( XPS and UPS ). The diamond surfaces were polished by a hydrogen plasma treatment and present a mean roughness below 10 Å . The hydrogen-terminated diamond surfaces have negative electron affinity (NEA), whereas the hydrogen-free surfaces present positive electron affinity (PEA). The NEA peak is only observed for the borondoped diamond (100)-(2×1):H surface, whereas it is not visible for the nitrogen-doped diamond (100)-(2×1):H surface due to strong upward band bending. For the boron-doped diamond (111)-(1×1):H surface, the NEA peak is also absent due to the conservation of the parallel wavevector component (k d ) in photoemission. Electron emission from energy levels below the conduction band minimum (CBM ) up to the vacuum level E vac allowed the electron affinity to be measured quantitatively for PEA as well as for NEA. The emission from populated surface states forms a shoulder or a peak at lower kinetic energies, depending on the NEA behavior and additionally shows a dispersion behavior. The low boron-doped diamond (100)-(2×1):H surface presents a highintensity NEA peak with a FWHM of 250 meV. Its cut-off is situated at a kinetic energy of 4.9 eV, whereas the upper limit of the vacuum level is situated at 3.9 eV, resulting in a NEA of at least −1.0 eV and a maximum work function of 3.9 eV. The high-borondoped diamond (100) surface behaves similarly, showing that the NEA peak is present due to the downward band bending independent of the boron concentration. The nitrogen-doped (100)-(2×1):H surface shows a low NEA of −0.2 eV but no NEA peak due to the strong upward band bending. The (111)-(1×1):H surface does not show a NEA peak due to the k d conservation in photoemission; E vac is situated at 4.2 eV or below, resulting in a NEA of at least −0.9 eV and a maximum work function of 4.2 eV. The high-intensity NEA peak of boron-doped diamond seems to be due to the downward band bending together with the reduced work function because of hydrogen termination. Upon hydrogen desorption at higher annealing temperatures, the work function increases, and NEA disappears. For the nitrogen-doped diamond (100) surface, the work function behaves similarly, but the observation of a NEA peak is absent because of the surface barrier formed by the high upward band bending.

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Section: Sample Description and Preparationmentioning

confidence: 85%

Electron affinity and work function of differently oriented and doped diamond surfaces determined by photoelectron spectroscopy

et al. 1998

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“…Experimental evidence [64] also suggests that much of the smooth, ordered (100)(2x1) material observed in the experiments might not be produced during growth, but rather by hydrogen-assisted surface diffusion or etching / regrowth in a H / H, plasma prior to scanning probe analysis. In addition, (100) faces on CVD diamond often show macrosteps [65,66], presumably from step bunching, which suggests that some mechanism (perhaps nitrogen-assisted) exists to pin (100) steps as they grow. Thus the precise mechanism(s) that lead to the development of smooth, ordered ( 1OO)(2X 1) domains, and their importance during the CVD process itself, remain unclear.…”

Section: Discussionmentioning

confidence: 99%

Etching effects during the chemical vapor deposition of (100) diamond

Battaile

Srolovitz

Oleinik

et al. 1999

The Journal of Chemical Physics

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Sandia NationalLaboratories Albuquerque+ NM 87185Under botb static and common MAS conditions (< 15 kHz) the question of residual X-Y heteronuclear decoupling can become a complicating factor in the analysis of various Nh4R results. In our -lab the impact of 31P-nNa dipolar coupling on the observed 2%a Mz relaxation for a series of sodium phosphate glasses was recently investigated by employing continuos wave 31Pdecoupling during the entire pulse sequence. Initially these efforts were complicate by the inability to provide a gating pulse during the data acquisition using the standard Bruker nomenclature, go=2, for the acquisition loop. A pulse sequence to overcome these restrictions is given below. Our AMX400 instrument is configured with a 3 channelM CI, but utilizes a linear AMT amplifier on the 3rdchannel (requiring gating pulse via the C4program call during the entire time it is on). Tbe standard acquisition loop has been replaced by direct w% and aq commands for data acquisition. Unlike the go=2 statement which does not allow a C4gating command to be include~these individual acquisition commands can all include distinct C4 gating.

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“…and can be easily dislocated from the diamond samples upon heating. The unbonded H has been recognized as a possible cause for the change in electrical conductivity of the CVD diamond sheets upon annealing [17].…”

Section: Resultsmentioning

confidence: 99%