Homoepitaxial growth of ZnO by metalorganic vapor phase epitaxy in two-dimensional growth mode

Morphological, structural and electrical investigations on non-polar a-plane ZnO epilayers

“…Heteroepitaxial [5][6][7] as well as homoepitaxial [7][8][9] growth approaches were adopted so far. Nevertheless, the structural and optical quality that can be achieved with a homoepitaxial growth process and c-plane substrates [10][11][12][13][14] has not been reached until now. It was our aim to develop a growth process for non-polar a-plane ZnO-films that leads to the Frank-van-der-Merwe growth and thereby demonstrate a superior morphological, structural and optical quality of the epilayers.…”

Nucleation and coalescence behavior for epitaxial ZnO layers on ZnO/sapphire templates grown by halide vapor phase epitaxy

“…While ZnO substrates for homoepitaxial growth have already been available and there is an increase in the number of reports on ZnO homoepitaxy [2][3][4][5], one must resolve some issues, including impurity control during bulk growth, epi-ready surface treatment and cost [6].…”

“…Considering the melting point of ZnO (1975 1C), one expects approximately 1000 1C will be essential to grow epitaxial ZnO. On the other hand, few papers have been published on growth of ZnO films at a high temperature of around 1000 1C [4,[10][11][12]. Because of the lower sticking coefficient of Zn, growth at a high temperature exceeding 900 1C cannot readily be calculated when a Zn vapor or a conventional metal-organic material is used as a precursor for Zn.…”

Step-flow growth of homoepitaxial ZnO thin films by ultrasonic spray-assisted MOVPE

“…These results indicate that the homoepitaxial ZnO film was grown via the step-flow growth. The two-dimensional growth (not mentioned by the step-flow growth) of the homoepitaxial ZnO thin films by MOVPE has been reported [29]. However, in this report the authors used the O-polar ZnO substrates, and the small nano-pillars were evident.…”