Homoepitaxial growth rate measurement using in situ reflectance anisotropy spectroscopy

Kaspari, Christian; Pristovsek, Markus; Richter, Wolfgang

doi:10.1016/j.jcrysgro.2006.10.039

Cited by 6 publications

(1 citation statement)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The prediction error is in an acceptable range, which implies that the developed model was flexible enough to provide desirable prediction accuracy for both (100) and (010) substrates considering the system fluctuation of the MOVPE system. The possible prediction deviation of the doping level may be due to the lack of reliable in situ growth-rate-measurement techniques, as is widely utilized for the homoepitaxial growth of III-V group semiconductor materials [47], and the unknown incoming precursor molar flow on the substrate surface. It puts doubts on the precision of the collected growth parameters and the quality of data.…”

Section: Resultsmentioning

confidence: 99%

Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga2O3 Thin Films by Deep-Learning Approach

et al. 2021

View full text Add to dashboard Cite

In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (010) β-Ga2O3 thin film grown by the metalorganic vapor phase epitaxy (MOVPE). The model reveals that a hidden parameter, the Si supplied per nm (mol/nm), has a dominant influence on the doping process compared with other process parameters. An empirical relation is concluded from this model to estimate the doping level of the grown film with the Si supplied per nm (mol/nm) as the primary variable for both (100) and (010) β-Ga2O3 thin film. The outcome of the work indicates the similarity between the doping behavior of (100) and (010) β-Ga2O3 thin film via MOVPE and the generality of the results to different deposition systems.

show abstract

Section: Resultsmentioning

confidence: 99%