Homogeneous epitaxial growth of AlN single-crystalline films on 2 inch-diameter Si (111) substrates by pulsed laser deposition

Yang, Hui; Wang, Wenliang; Liu, Zuolian; Li, Guoqiang

doi:10.1039/c3ce40886h

Cited by 39 publications

(56 citation statements)

References 40 publications

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“…Nevertheless, the lattice parameter and coefficient of thermal expansion (CTE) mismatches between AlN and Si(111) are as large as 27% and 49%, respectively, which would cause high-density defects in as-grown AlN films [4]. Additionally, AlN films grown by MOCVD or magnetron sputtering (MS) usually exhibit thick interfacial layer, poor surface morphology owing to serious interfacial reactions between films and substrates at high temperature, which greatly deteriorates the performance of electronic devices [3][4][5][6][7]. To solve these problems, AlN films grown on Si(110) substrates by pulsed laser deposition (PLD) have been deployed.…”

Section: Introductionmentioning

confidence: 99%

“…AlN has excellent thermal, chemical, and electrical properties, which makes it promising for the wide application of film bulk acoustic wave resonators (FBARs), high surface acoustic wave (SAW) devices, etc [1][2][3]. Recently, high-quality AlN films are usually grown on sapphire substrates by metal-organic chemistry vapor deposition (MOCVD) [2].…”

Section: Introductionmentioning

confidence: 99%

“…In the PLD growth, the target-substrate distance (d) is considered as one of the most critical factors, due to the fact that the kinetic energy and the number of precursors are fairly sensitive to d, which affects the quality of as-grown films greatly [8][9][10]. To date, although AlN films have been greatly grown on Si substrates by PLD [3,[8][9][10][11], the growth of AlN films on Si(110) substrates by PLD and the effect of d on the quality of AlN films on Si (110) substrates grown by PLD lack thorough study.…”

Section: Introductionmentioning

confidence: 99%

“…On the other hand, the Si(110) is more easier to be etched compared with Si(111) and sapphire [4], which makes it more suitable for the fabrication of verticalstructure optoelectronic devices. Furthermore, PLD can supply enough energy for the migration of the precursors on the substrates, and thereby make the films growth at low temperature possible [1,3]. In the PLD growth, the target-substrate distance (d) is considered as one of the most critical factors, due to the fact that the kinetic energy and the number of precursors are fairly sensitive to d, which affects the quality of as-grown films greatly [8][9][10].…”

Section: Introductionmentioning

confidence: 99%

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Effect of target–substrate distance on the quality of AlN films grown on Si(110) substrates by pulsed laser deposition

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Effect of target–substrate distance on the quality of AlN films grown on Si(110) substrates by pulsed laser deposition

et al. 2015

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“…10 However, the residual elastic strain between the film and the substrate is a critical obstacle that needs to be overcome. [11][12][13][14] Excessive strains would lead to the rolling up or cracking of the films, and subsequent malfunction of the components in application. Zinc sulphide (ZnS) is one of the first semiconductor materials ever discovered, and is considered to be a highly promising building block for novel diverse applications, 15 such as ultraviolet light emitting diodes, 16 photodetectors, 17 flat panel displays, 18 thin films solar cells, 19 etc.…”

Section: Introductionmentioning

confidence: 99%

Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

Wang

Xiong

et al. 2017

CrystEngComm

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In this paper, we report the first successful epitaxial synthesis of flat wafer-scale two-dimensional ZnS thin films on single- file at the interfaces were studied in detail. After a simple etching treatment, exfoliated large-area free-standing ZnS thin films were achieved for the first time. The present product is expected to become valuable to the strategy of growing large-area thin films or heterostructures with a large lattice mismatch.

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2D AlN Layers Sandwiched Between Graphene and Si Substrates

Wang

Zheng

et al. 2018

Advanced Materials

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As group III-nitride semiconductors are thinned to only a few atomic layers, regarding as 2D materials, it would lead to an ultrawide bandgap (E g ) due to the quantum confinement effect, [11,12] which can be used as ultraviolet optoelectronic devices needed ultrawide E g semiconductors. [13,14] Moreover, 2D group III-nitride semiconductors showing anomalously temperature-dependent thermal conductivity and orbitally driven ultra-low thermal conductivity have been predicted, [15,16] which make them prospective for applications in energy conversion, for example, thermos-electrics. [17] However, the experimental synthesis of 2D group III-nitride semiconductors is still meeting with tremendous difficulties due to the fact that group III-nitride semiconductors more easily orientate along c-axis than any other axis [18] and the lateral mobility for precursor atoms of group III-nitride materials, i.e., AlN, is very low, [19] which result in the formation of 3D crystal structure. Moreover, the surface energy constraint and large lattice mismatch between group III-nitride semiconductors and substrates would also lead to the formation of 3D island crystal. [11] In this work, we have successfully realized the epitaxial growth of 2D AlN layers sandwiched between graphene and Si substrates for the first time in the world by metal organic chemical vapor deposition (MOCVD). On the one hand, Si (111) surface with high symmetry [20] has stable adsorption sites for Al and N adatoms, Figure S1 in the Supporting Information. On the other hand, Si has a lattice mismatch with AlN(0001) of ≈19%, [21] Figure S2 in the Supporting Information, producing the tensile stress together with the effect of Gibbs free energy that drive the crystal structure of 2D AlN transforming from R3m structure to P6 3 MC structure. [22][23][24] During the growth process, hydrogenation for graphene/Si hetero-structures with hydrogen (H 2 ) guarantees the formation of 2D AlN layers. The 2D AlN layers are sandwiched between graphene and Si substrates after hydrogenation, while no interlayer can be found between graphene and Si substrates without hydrogenation. To further study the formation mechanism of 2D AlN layers and the effect of hydrogenation on the formation of 2D AlN layers, theoretical calculations with first-principles calculations based on density functional theory (DFT) have been carried out. We further predicted and determined the E g of the 2D AlN layers theoretically and experimentally by Hartree-Fock local density

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Homogeneous epitaxial growth of AlN single-crystalline films on 2 inch-diameter Si (111) substrates by pulsed laser deposition

Cited by 39 publications

References 40 publications

Effect of target–substrate distance on the quality of AlN films grown on Si(110) substrates by pulsed laser deposition

Effect of target–substrate distance on the quality of AlN films grown on Si(110) substrates by pulsed laser deposition

Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

2D AlN Layers Sandwiched Between Graphene and Si Substrates

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