Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method

Kinoshita, Kyôichi; Katō, Hirokazu; Iwai, M.; Tsuru, Tetsuya; Muramatsu, Yukiko; Yoda, Shinichi

doi:10.1016/s0022-0248(01)01033-8

Cited by 56 publications

(39 citation statements)

References 8 publications

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“…To improve this situation, Kinoshita et al [11,12] proposed a new crystal growth method called the Travelling Liquidus-Zone (TLZ) method. We summarise the basic idea of crystal growth by the TLZ method in the following (see also Fig.…”

Section: Travelling Liquidus-zone Methodsmentioning

confidence: 99%

“…Therefore, the growth technique developed in this study can be applied to any other pseudo-binary crystals, in general. Having found that it is extremely difficult to grow an InGa 0:7 As crystal by the Bridgman method [8], we employ a new crystal growth method named the Travelling Liquidus-Zone (TLZ) method [11,12]. We review the TLZ method briefly in Section 2.…”

Section: Introductionmentioning

confidence: 99%

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Numerical analysis of crystal growth of an InAs–GaAs binary semiconductor by the Travelling Liquidus-Zone method under microgravity conditions

Maekawa

Sugiki

Matsumoto³

et al. 2004

International Journal of Heat and Mass Transfer

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Section: Travelling Liquidus-zone Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Numerical analysis of crystal growth of an InAs–GaAs binary semiconductor by the Travelling Liquidus-Zone method under microgravity conditions

Maekawa

Sugiki

Matsumoto³

et al. 2004

International Journal of Heat and Mass Transfer

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“…7 As is an attractive lattice-matched substrate material for laser diodes to be used in future optical communication systems. Theoretically it is found that the laser diode fabricated on In 0.3 Ga 0.7 As substrate shows laser oscillation at 1.3 µm wavelength with higher gain and better temperature characteristics than the conventional InP-based laser diodes [1].…”

Section: Introductionmentioning

confidence: 99%

“…However, from the experiments the temperature characteristics of InGaAs-based laser diodes were found to be improved but the gain characteristics were not improved due to poor crystal quality of the substrate [2]. Several growth methods [3][4][5][6][7] have been applied to grow this material, among which modified two-step multicomponent zone melting (MCZM) method [6] is an advanced growth technique. In this technique, by controlling the temperature of the furnace, the composition is gradually increased from GaAs seed crystal to a certain value in the first-step growth process and then it is kept constant in the next step.…”

Section: Introductionmentioning

confidence: 99%

Approach to reduce the residual strain in bulk InGaAs crystals grown by the multi‐component zone melting method

Rahman

Islam

Alam

et al. 2007

Phys. Status Solidi (c)

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An analytical study has been carried out to evaluate the quantitative amount of strain and its distribution in bulk In x Ga 1-x As crystals grown by the two-step multi-component zone melting (MCZM) method. With the combination of Raman scattering, photoluminescence and energy dispersive X-ray experiments, it has been confirmed that there exists large amount of strain in bulk In x Ga 1-x As crystals grown by the two-step MCZM method due to approximately exponential variation of composition from 0.06 to 0.29 in the first step growth process. Using an axially symmetrical strain model, the quantitative amount of strain and its distribution have been studied for various compositional profiles including the currently used profile. It has been found that the strain and its distribution are strongly dependent on the shape of the compositional profile.

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“…In order to use this material as substrates, compositionally homogeneous large-size high-quality single crystals are the basic requirements. Several methods [1][2][3][4][5][6] have been applied to grow this material. However, high-quality large-size single crystals with homogeneous composition couldn't be obtained.…”

Section: Introductionmentioning

confidence: 99%

Spectroscopic investigation of strain induced by compositional variation in bulk InxGa1–xAs crystal grown by MCZM method

Rahman

Islam²,

Yamada

2006

Cryst. Res. Technol.

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Raman scattering (RS), photoluminescence (PL) and energy dispersive X-ray (EDX) experiments have been carried out to investigate residual strain and hence to understand breakage issue in bulk In x Ga 1-x As crystal grown by multi component zone melting (MCZM) method. It is found from a comparison that there is a large discrepancy among the RS, PL and EDX results due to the strain induced by compositional variation in the crystal. The strain induced changes in TO GaAs and PL peak positions are found to be 4.04 cm -1 and 0.097 eV, respectively, for the variation of composition from 0.06 to 0.29 from the seed-end to the tail-end of the crystal. By assuming a simple one-dimensional strain distribution, the strain value corresponding to 4.04 cm -1 / 0.097 eV can be obtained of the order of 10 -2 , which is large enough for understanding the breakage issue in the crystal investigated here.

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Homogeneous In0.3Ga0.7As crystal growth by the traveling liquidus-zone method

Cited by 56 publications

References 8 publications

Numerical analysis of crystal growth of an InAs–GaAs binary semiconductor by the Travelling Liquidus-Zone method under microgravity conditions

Numerical analysis of crystal growth of an InAs–GaAs binary semiconductor by the Travelling Liquidus-Zone method under microgravity conditions

Approach to reduce the residual strain in bulk InGaAs crystals grown by the multi‐component zone melting method

Spectroscopic investigation of strain induced by compositional variation in bulk InxGa1–xAs crystal grown by MCZM method

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