Homogenization of CZ Si wafers by Tabula Rasa annealing

Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers

“…In the wafers without TR process the oxygen was completely precipitated already after 12 h at 1000 1C, however the shortest TR process prolonged the precipitation at least twice, see the results for wafers close to ingot seed in Refs. [14]. We observed a similar effect also in the wafers from the ingot end.…”

Oxygen Precipitation Studied by X-Ray Diffraction Techniques

“…Even though the amount of O i in preanneled samples is slightly higher than in the non preannealed ones, no significant differences were detected in Laue diffraction curves between all 2mm samples annealed within the process -(not) preannealed + 600°C/24h + 800°C /4h + 1000°C/x h. The effect of preannealing was below the sensitivity of these measurements. Moreover according to previous observations, the preannealing can initiate some precipitates to grow even further to very large values [9] having much larger strain area and these would influence mainly the coherent peak close to η = 0° and less the diffuse scattering far from the coherent diffraction peak. All the diffraction curves from defect samples in figure 5 were modeled assuming silicon crystal containing also three sizes of spherical holes.…”