Honeycomb network of indium trimers and monomers on Si(111)-(2<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mo>×</mml:mo></mml:math>2)

Kwon, Se Gab; Kang, Myung Ho

doi:10.1103/physrevb.89.165304

Cited by 13 publications

(4 citation statements)

References 30 publications

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“…In this work, we propose a different mechanism to realize VP-QAHE in honeycomb lattice by introducing a staggered magnetic exchange field, which is an intrinsic property [26,27]. We show that this system can be viewed as a ferrimagnetic (FIM) honeycomb lattice, which has a band inversion at K, consistent with our model.…”

supporting

confidence: 52%

“…Instead of focusing on a freestanding thin film which is difficult to synthesize experimentally and whose topology may vary when depositing on a substrate, we explore a 2D system supported on a substrate [42,43]. Owing to the experimental success of epitaxial growth of In-triangle on a Si(111)-(2×2) surface [24][25][26][27][28], we predict that it has the potential to realize VP-QAHE, once decorated with magnetic Co. localized at the center, rather than on the In atomic sites. This will be discussed later.…”

mentioning

confidence: 99%

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Valley-Polarized Quantum Anomalous Hall Effect in Ferrimagnetic Honeycomb Lattices

2017

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supporting

confidence: 52%

mentioning

confidence: 99%

Valley-Polarized Quantum Anomalous Hall Effect in Ferrimagnetic Honeycomb Lattices

2017

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“…So far, there are two single-layer In phases with the coverage verified as 1.0 ML. One is the 4×1 phase, which is metallic but definitely one dimensional with weakly coupled In chains [19][20][21], and the other 2×2 phase is known as an insulating 2D honeycomb lattice [7,22,23]. Thus, the single-layer limit of 2D-metallic In overlayers still remains to be explored.…”

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confidence: 99%

Single-Layer Limit of Metallic Indium Overlayers on Si(111)

Park

Kang

2016

Phys. Rev. Lett.

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Density-functional calculations are used to identify one-atom-thick metallic In overlayers on the Si(111) surface, which have long been sought in quest of the ultimate two-dimensional (2D) limit of free-electron-like metallic properties. We predict two metastable single-layer In phases, one √ 7 × √ 3 phase with a coverage of 1.4 monolayer (ML; here 1 ML refers to one In atom per top Si atom) and the other √ 7 × √ 7 phase with 1.43 ML, which indeed match well with experimental evidences. Both phases reveal quasi-1D arrangements of protruded In atoms, leading to 2D-metallic but anisotropic band structures and Fermi surfaces. This directional feature contrasts with the free-electron-like In-overlayer properties that are known to persist up to the double-layer thickness, implying that we may have achieved the 2D limit of free-electron-like In overlayers in previous studies of double-layer In phases.How thin can metal films be yet retaining free-electronlike metallic properties [1,2]? It might be one atomic layer that represents the ultimate 2D limit of a crystalline film. This fundamental question is in fact the very motivation underlying extensive experimental studies of the In/Si(111)-( √ 7 × √ 3) surface [3][4][5][6][7][8][9][10][11][12][13][14][15][16], which has long been considered to represent one-atom-thick indium overlayers [3,4]. Fascinating 2D electronic features were reported, including the free-electron-like parabolic bands and circular Fermi surfaces [6], the persistence of superconductivity with a high T c close to the bulk value [8,9], and the intriguing metallic transport behavior [10], all of which have been referred to as revealing the ultimate 2D limit.Unlike the expectations, however, the In/Si(111)-( √ 7 × √ 3) surface was recently verified by densityfunctional theory (DFT) calculations [17,18] to actually represent two-atom-thick In overlayers, either rectangular (hereafter, √ 7-rect) or hexagonal ( √ 7-hex), with 2.4 ML In coverage. So far, there are two single-layer In phases with the coverage verified as 1.0 ML. One is the 4×1 phase, which is metallic but definitely one dimensional with weakly coupled In chains [19][20][21], and the other 2×2 phase is known as an insulating 2D honeycomb lattice [7,22,23]. Thus, the single-layer limit of 2D-metallic In overlayers still remains to be explored.Noteworthy in this regard is that there is another In/Si(111)-( √ 7 × √ 3) surface, differing from the verified √ 7-rect and √ 7-hex double-layer phases. This phase appears intermediately in between the 2×2 and √ 7-rect phases when prepared by room-temperature (RT) In deposition onto the In/Si(111)-( √ 3 × √ 3) surface and is known to transform into the honeycomb-like √ 7 × √ 7 phase during cooling down in the range from 265 to 225 K [7]. This RT √ 7 × √ 3 phase was regarded as the √ 7-hex phase on the basis of similar STM images [7], but a recent DFT study clarified that it should be distinguished from the double-layer √ 7-hex phase [18]. Moreover, in a latest STM study [16], the RT √ 7 × √ 3 phase was ...

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“…There have been both experimental and theoretical investigations, mainly focused on the geometry and properties of the In sub-or thin-layer on Si{1 1 1} surfaces [21][22][23][24][25][26][27][28], mainly motivated by the discovery of unusual superconductivity [25]. In particular, Migitaka and Tokuyama reported a way to prepare diodes with good rectifying properties by alloying In with p-type Si [29].…”

Section: Introductionmentioning

confidence: 99%

Interfacial charge transfer and Schottky barriers at c-Si/a-In heterojunctions

et al. 2022

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Metal-Semiconductor (M/S) heterojunctions, better known as Schottky junctions play a crucial role in modern electronics. At present, the mechanisms behind the M/S junctions are still a subject of discussion. In this work, we investigate the interfaces between semiconducting crystalline Si and amorphous metallic indium, Si{0 0 1}/a-In and Si{1 1 1}/a-In using both ab initio molecular dynamics simulations and a Schottky-Mott approach. The simulations reveal the formation of a distinct border between the Si substrates and amorphous In at the interfaces. The In atoms adjacent to the interfaces exhibit atomic ordering. Charge transfer occurs from In to Si, forming c-Si-q/a-In+q charge barriers at the interfaces. This indicates that a crystalline p-Si/a-In heterojunction will have rectifying properties, which agrees with an analysis using the Schottky-Mott model which predicts a Schottky barrier height of 1.3 eV for crystalline p-Si/a-In using the calculated work function for a-In (3.82 eV). We further discuss the interfacial charge transfer, related hole-depletion regions in Si adjacent to the interfaces and the Schottky-Mott approximations.

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Honeycomb network of indium trimers and monomers on Si(111)-(2×2)

Cited by 13 publications

References 30 publications

Valley-Polarized Quantum Anomalous Hall Effect in Ferrimagnetic Honeycomb Lattices

Valley-Polarized Quantum Anomalous Hall Effect in Ferrimagnetic Honeycomb Lattices

Single-Layer Limit of Metallic Indium Overlayers on Si(111)

Interfacial charge transfer and Schottky barriers at c-Si/a-In heterojunctions

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