Hopping conduction in uniaxially stressed Si:B near the insulator-metal transition

Bogdanovich, S.; Simonian, D.; Kravchenko, S. V.; Sarachik, M. P.; Bhatt, R. N.

doi:10.1103/physrevb.60.2286

Cited by 9 publications

(8 citation statements)

References 20 publications

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“…1 in three dimensional (unstressed) bulk Si:B, but with an exponent β = 1/3 instead of the value 1/4 expected for Mott variable-range hopping in three dimensions. The same exponent was found in experiments on Si:B where uniaxial stress instead of dopant concentration was used as the parameter to tune the material through the metalinsulator transition [16,17].…”

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confidence: 61%

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Scaling of the conductivity of insulating Si:B: A temperature-independent hopping prefactor

Sarachik

Dai

2002

Europhys. Lett.

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For insulating Si:B with dopant concentrations from 0.75nc to the critical concentration nc, the conductivity ranging over five orders of magnitude collapses using a single scaling parameter T * onto a universal curve of the form σ(T ) = σ0f (T * /T ) with a temperature-independent prefactor of the order of Mott's minimum metallic conductivity, σ0 ≈ σM ≈ 0.05e 2 /hn −1/3 c . The function f (T * /T ) = e −(T * /T ) β with β = 1/2 when T * /T > 10, corresponding to Efros-Shklovskii variable-range hopping. For T * /T < 8 the exponent β = 1/3, a value expected for Mott variable-range hopping in two rather than three dimensions. The temperature-independent prefactor implies hopping that is not mediated by phonons.

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confidence: 61%

“…Indeed, hopping exponents near 1/2 are generally found for strong electron interactions, while weak interactions (compared with hopping energies) give rise to exponents 1/4 in three dimensions and 1/3 in two dimensions. The single exception to date was reported for stressed Si:B, where the exponent was found to be 1/3 in three dimensions [16,17].…”

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confidence: 99%

Scaling of the conductivity of insulating Si:B: A temperature-independent hopping prefactor

Sarachik

Dai

2002

Europhys. Lett.

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“…Numerous experiments on 3D doped semiconductors confirmed the power-law behavior of ρ in the critical region. However, there is still no consensus regarding the value of α: both α = 1/2 [24][25][26] and α = 1/3 [ 27,28] have been reported. It is also possible that α depends on whether a semiconductor is compensated or not.…”

Section: Metal Insulator and Critical Point General Discussionmentioning

confidence: 99%

Metal–insulator transition in 2D: resistance in the critical region

Altshuler

Maslov

Pudalov

2001

Physica E: Low-dimensional Systems and Nanostructures

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The goal of this paper is to highlight several issues which are most crucial for the understanding of the "metal-insulator transition" in two dimensions. We discuss some common problems in interpreting experimental results on high mobility Si MOSFETs. We analyze concepts and methods used to determine the critical density of electrons at the metal-insulator transition. In particular, we discuss the origin of the temperature dependence of the resistivity and reasons for this dependence to flatten out at some electron density in the vicinity of the metal-insulator transition. This flattening has recently been proposed to indicate a true quantum phase transition. We suggest an alternative interpretation of this result and demonstrate the consistency of our proposition with the experimental data. One of the main questions, which arise in connection with the transition, is whether or not the metallic state is qualitatively distinct from a conventional disordered Fermi liquid. We analyze the arguments in favor of both affirmative and negative answers to this question and conclude that the experimental results accumulated up-to-date do not provide convincing evidence for the new state of matter characterized by a metallic-like residual conductivity. We also discuss in details the measurement and control of the electron temperature; these issues are crucial for interpreting the low-temperature experimental data.

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“…The conductivity σ is the quantity which is most often studied in transport measurements of disordered systems [17,18,9,11,12,13,115,10]. However, other transport properties such as the thermopower S, the thermal conductivity K and the Lorenz number L 0 have also been measured [116,117,118].…”

Section: Thermoelectric Transport Coefficients In the Anderson Modelmentioning

confidence: 99%

Numerical Investigations of Scaling at the Anderson Transition

Röemer

Schreiber

2003

Anderson Localization and Its Ramifications

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Hopping conduction in uniaxially stressed Si:B near the insulator-metal transition

Abstract: Using uniaxial stress to tune the critical density near that of the sample, we have studied in detail the low-temperature conductivity of p-type Si:B in

Cited by 9 publications

References 20 publications

Scaling of the conductivity of insulating Si:B: A temperature-independent hopping prefactor

Scaling of the conductivity of insulating Si:B: A temperature-independent hopping prefactor

Metal–insulator transition in 2D: resistance in the critical region

Numerical Investigations of Scaling at the Anderson Transition

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